Rad Hard GaN Drivers and Power Stages IC's

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Rad Hard GaN Drivers and Power Stages IC’s

Introducing EPC Space Rad Hard GaN ICs which are engineered for aerospace, satellite, and harsh-environment applications. With unmatched radiation hardness and the efficiency of Gallium Nitride (GaN) technology, these circuits ensure reliability and peak performance in demanding conditions. Elevate your mission-critical systems with our robust solutions for optimal power management and control.

Looking for GaN Technology for Consumer and Industrial Applications? – Discover how GaN technology is revolutionizing power conversion across various industries. Visit EPC.

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Excel spreadsheet

Part Number	Screening Level	Configuration	V_DD (V)	I_OUT (A)	Input Logic	Max Frequency	UVLO	LET (1000 kRad)	Package
EPC7009L16SH	Space	Low side Gate driver			3.0 V	3 MHz		84	16 Pin QLCC SMT
EPC7011L7C	COT	Half Bridge Power Stage	60	6	3.0 V	2 MHz	9	-	L7 Ceramic (6.35 mm x 5.08 mm)
EPC7011L7BH	Space B	Half Bridge Power Stage	60	6	3.0 V	2 MHz	9	1000 kRad LET= 84 MeV/mg/cm2	L7 AIN Ceramic (6.35 mm x 5.08 mm)
EPC7011L7SH	Space S	Half Bridge Power Stage	60	6	3.0 V	2 MHz	9	1000 kRad LET= 84 MeV/mg/cm2	L7 AIN Ceramic (6.35 mm x 5.08 mm)
EPC7012L7C	COT	Half Bridge Power Stage	60	6	3.0 V	2 MHz	9	-	L7 AIN Ceramic (6.35 mm x 5.08 mm)
EPC7012L7BH	Space B	Half Bridge Power Stage	60	6	3.0 V	2 MHz	9	1000 kRad LET= 63 MeV/mg/cm2	L7 AIN Ceramic (6.35 mm x 5.08 mm)
EPC7012L7SH	Space S	Half Bridge Power Stage	60	6	3.0 V	2 MHz	9	1000 kRad LET= 63 MeV/mg/cm2	L7 AIN Ceramic (6.35 mm x 5.08 mm)

For more information or to purchase GaN products please contact sales@epc.space

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Rad Hard GaN Drivers and Power Stages IC’s

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