Space Systems – DC-DC
Power supplies used in harsh environments such as space, high-altitude flight, and high-reliability defense systems must operate reliably under continuous exposure to ionizing radiation.
Gallium nitride (GaN) enables a new generation of radiation-hardened DC-DC converters capable of operating at significantly higher switching frequencies, higher efficiencies, and greater power densities than traditional silicon-based solutions.
These capabilities are critical for Micro, LEO, and GEO satellites, as well as deep-space and exploration missions, where size, weight, efficiency, and reliability directly impact mission success.
Why GaN?
GaN fundamentally changes the design and performance limits of DC-DC converters.
Unlike silicon MOSFETs, GaN devices eliminate reverse recovery losses and dramatically reduce parasitic effects. This
allows converters to switch faster, operate more efficiently, and significantly reduce the size of passive
components such as inductors and capacitors.
The result is not just a better power stage – but a system-level improvement in power density, thermal performance,
and overall spacecraft efficiency.
Features
- Proven reliability in harsh environments Designed and qualified for radiation-heavy
space missions with demonstrated flight heritage - No parasitic p-n junction diode Eliminates reverse recovery losses, enabling higher
efficiency and cleaner switching - High-frequency switching capability Enables MHz-class operation, reducing the size of
magnetics and passives - Higher power system efficiency Lower conduction and switching losses improve overall
energy utilization - Smaller footprint and higher integration Compact designs enabled by reduced passive
component size and optimized layouts
Benefits
- Reduced system size and weight Higher switching frequency allows smaller inductors
and capacitors, directly reducing mass - Higher frequency operation for advanced systems Supports next-generation payloads,
communications, and high-speed electronics - Reduced or eliminated shielding requirements Intrinsic radiation tolerance of GaN
simplifies system design compared to silicon - Reduced power overhead and improved energy utilization Higher efficiency lowers
losses and thermal constraints - Extended satellite lifetime and mission capability Improved efficiency and
reliability contribute to longer operational life in orbit
Have a question about DC-DC Converters in Space?
