Introducing EPC Space Rad Hard GaN ICs which are engineered for aerospace, satellite, and harsh-environment applications. With unmatched radiation hardness and the efficiency of Gallium Nitride (GaN) technology, these circuits ensure reliability and peak performance in demanding conditions. Elevate your mission-critical systems with our robust solutions for optimal power management and control.
Products
Rad Hard GaN Drivers and Power Stages IC’s
PDF Format
Excel spreadsheet
Part Number Screening Level Configuration VDD (V) IOUT (A) Input Logic Max Frequency UVLO LET (1000 kRad) Package
EPC7009L16SH Space Low side Gate driver 3.0 V 3 MHz 84 16 Pin QLCC SMT
EPC7011L7C COT Half Bridge Power Stage 50 6 3.0 V 2 MHz 9 - L7 Ceramic
(6.35 mm x 5.08 mm)
EPC7011L7BH Space B Half Bridge Power Stage 50 6 3.0 V 2 MHz 9 1000 kRad
LET= 84 MeV/mg/cm2L7 AIN Ceramic
(6.35 mm x 5.08 mm)
EPC7011L7SH Space S Half Bridge Power Stage 50 6 3.0 V 2 MHz 9 1000 kRad
LET= 84 MeV/mg/cm2L7 AIN Ceramic
(6.35 mm x 5.08 mm)
EPC7012L7C COT Half Bridge Power Stage 60 6 3.0 V 2 MHz 9 - L7 AIN Ceramic
(6.35 mm x 5.08 mm)
EPC7012L7BH Space B Half Bridge Power Stage 60 6 3.0 V 2 MHz 9 1000 kRad
LET= 63 MeV/mg/cm2L7 AIN Ceramic
(6.35 mm x 5.08 mm)
EPC7012L7SH Space S Half Bridge Power Stage 60 6 3.0 V 2 MHz 9 1000 kRad
LET= 63 MeV/mg/cm2L7 AIN Ceramic
(6.35 mm x 5.08 mm)
For more information or to purchase GaN products please contact [email protected]
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