EPC Space application notes offer detailed explanations of gallium nitride (GaN)-base Radiation Hardened device technology, performance, and capabilities. If there is an area of interest not covered, please contact us at [email protected] or submit an inquiry to Ask Max. Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices (AN001) Driving the Gate of a EPC Space Rad Hard eGaN®HEMT Transistor (AN003) Power Supply Bypassing and Voltage Overshoot Reduction for eGaN® HEMTs (AN004) Long Live the The FSMD-G Package – Allowing New Parallels in Power Conversion (AN007) EPC Space Discrete and Modular Products for Space-Based Boost DC-DC Power Conversion (AN008)Application Notes and Guides
2N2222 EPC7014 Transistor!! (AN006)