EPC Space application notes offer detailed explanations of gallium nitride (GaN)-base Radiation Hardened device technology, performance, and capabilities. If there is an area of interest not covered, please contact us at firstname.lastname@example.org or submit an inquiry to Ask Max.
Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices (AN001)
Using EPC Space Products to Design a Low Parts Count Implementation of an Active-Clamp, Synchronously-Rectified Forward Converter (AN002)
Driving the Gate of a EPC Space Rad Hard eGaN®HEMT Transistor (AN003)