Application Notes

EPC Space application notes offer detailed explanations of gallium nitride (GaN)-base Radiation Hardened device technology, performance, and capabilities.  If there is an area of interest not covered, please contact us at or submit an inquiry to Ask Max.

Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices (AN001)

Using EPC Space Products to Design a Low Parts Count Implementation of an Active-Clamp, Synchronously-Rectified Forward Converter (AN002)

Driving the Gate of a EPC Space Rad Hard eGaN®HEMT Transistor (AN003)

Power Supply Bypassing and Voltage Overshoot Reduction for eGaN® HEMTs (AN004)

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