Application Notes and Guides

EPC Space application notes offer detailed explanations of gallium nitride (GaN)-base Radiation Hardened device technology, performance, and capabilities.  If there is an area of interest not covered, please contact us at [email protected] or submit an inquiry to Ask Max.

Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices (AN001)

Using EPC Space Products to Design a Low Parts Count Implementation of an Active-Clamp, Synchronously-Rectified Forward Converter (AN002)

Driving the Gate of a EPC Space Rad Hard eGaN^®HEMT Transistor (AN003)

Power Supply Bypassing and Voltage Overshoot Reduction for eGaN^® HEMTs (AN004)

Multiphase Interleaving Extends the Output Current/ Power and Versatility of the FBS-GAM02 and FBS-GAM02-PSE Modules (AN005)

Long Live the 2N2222 EPC7014 Transistor!! (AN006)

The FSMD-G Package – Allowing New Parallels in Power Conversion (AN007)

EPC Space Discrete and Modular Products for Space-Based Boost DC-DC Power Conversion (AN008)

EPC Space Discrete HEMTs and Third Quadrant Operation (AN009)