EPC Space News

GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications

As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power […]

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EPC Aims High with 300V space-grade GaN power transistor

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments. Electronics WeeklyAugust, 2023Read article

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GaN Technology Revolutionizing Space Missions: Enhancing Efficiency, Reliability, and Sustainability

GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage. Power Electronics NewsAugust, […]

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Ultra-Low On-Resistance, High Current 200 V and 300 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications

EPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments. Andover, […]

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Podcast: GaN Devices for Space Applications

GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. […]

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EPC Space Announces Distribution Partnership with Micross for Rad-Hard Gallium Nitride (GaN) Power Devices for Space, Aerospace, and Other High Reliability Applications

Micross to distribute EPC Space rad-hard GaN power devices to service the space, aerospace and other high reliability markets. Andover, MA.— July 2022 — EPC Space today announced that Micross […]

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Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications

EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. Andover, MA.— July 2022 — EPC Space announces the introduction two […]

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EPC Space Announces Ultra-Low On-Resistance 40 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications

EPC Space introduces a new 40 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments. Andover, MA.— April 2022 — […]

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EPC Space Announces Global Distribution Deal with Digi-Key for Rad Hard Gallium Nitride (GaN) Power Devices in Space, Aerospace, and Other High Reliability Applications

HAVERHILL, MA.— February 2022 — EPC Space today announced that Digi-Key Electronics will be a global distributor for EPC Space’s line of radiation hardened (rad hard) GaN-on-silicon transistors and ICs, […]

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Easy-to-use boards reduce time to market for rad-hard gallium nitride (GaN) power devices

EPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation-hardened (RH) gallium nitride (GaN) power devices into their high reliability […]

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