EPC Space News
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EPC Space Announces Distribution Partnership with Micross for Rad-Hard Gallium Nitride (GaN) Power Devices for Space, Aerospace, and Other High Reliability ApplicationsJuly 26, 2022 - 6:00 am
Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space ApplicationsJuly 19, 2022 - 6:00 am
EPC Space Announces Ultra-Low On-Resistance 40 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space ApplicationsApril 14, 2022 - 9:00 am
EPC Space Announces Global Distribution Deal with Digi-Key for Rad Hard Gallium Nitride (GaN) Power Devices in Space, Aerospace, and Other High Reliability ApplicationsFebruary 15, 2022 - 6:00 am
Easy-to-use boards reduce time to market for rad-hard gallium nitride (GaN) power devicesFebruary 10, 2022 - 6:38 pm
Easy-to-Use Demonstration Boards Reduce Time to Market for Rad Hard Gallium Nitride (GaN) Power Devices in High Reliability and Aerospace ApplicationsJanuary 18, 2022 - 9:00 am
Motor Driver Applications in SpaceNovember 3, 2021 - 5:09 pm
Exploring the Frontiers of GaN Power DevicesSeptember 23, 2021 - 10:16 am
Discovering GaN for Power Design in Space — An Interview with Alex LidowSeptember 21, 2021 - 9:53 am
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETsAugust 25, 2021 - 6:00 am
EPC Space Announces Distribution Partnership with Micross for Rad-Hard Gallium Nitride (GaN) Power Devices for Space, Aerospace, and Other High Reliability Applications
NewsMicross to distribute EPC Space rad-hard GaN power devices to service the space, aerospace and other high reliability markets. Andover, MA.— July 2022 — EPC Space today announced that Micross […]
Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications
NewsEPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. Andover, MA.— July 2022 — EPC Space announces the introduction two […]
EPC Space Announces Ultra-Low On-Resistance 40 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications
NewsEPC Space introduces a new 40 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments. Andover, MA.— April 2022 — […]
EPC Space Announces Global Distribution Deal with Digi-Key for Rad Hard Gallium Nitride (GaN) Power Devices in Space, Aerospace, and Other High Reliability Applications
NewsHAVERHILL, MA.— February 2022 — EPC Space today announced that Digi-Key Electronics will be a global distributor for EPC Space’s line of radiation hardened (rad hard) GaN-on-silicon transistors and ICs, […]
Easy-to-use boards reduce time to market for rad-hard gallium nitride (GaN) power devices
NewsEPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation-hardened (RH) gallium nitride (GaN) power devices into their high reliability […]
Easy-to-Use Demonstration Boards Reduce Time to Market for Rad Hard Gallium Nitride (GaN) Power Devices in High Reliability and Aerospace Applications
NewsEPC Space is providing easy-to-use demonstration boards ideal for evaluating the feature and capabilities of Rad Hard GaN power devices. HAVERHILL, MA.— January 2022 — EPC Space announces the availability […]
Motor Driver Applications in Space
NewsAs the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability […]
Exploring the Frontiers of GaN Power Devices
NewsGallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications. Electronics WeeklySeptember, 2021Read article
Discovering GaN for Power Design in Space — An Interview with Alex Lidow
NewsUnlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation […]
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETs
NewsEPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad Hard MOSFETs. HAVERHILL, MA.— August 2021 — For […]