EPC Space News
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EPC Space Launches Rad Hard GaN Gate Driver ICApril 3, 2024 - 6:00 am
EPC Space and Avnet Announce Distribution Agreement for Rad Hard GaN Power DevicesMarch 26, 2024 - 1:04 pm
EPC Space Launches World’s First Rad Hard GaN Power Stage ICFebruary 15, 2024 - 4:29 am
EPC Space’s Rad Hard Products Fuel Next Generation of Development Kits for Space Data ProcessingDecember 12, 2023 - 6:00 am
GaN Technology from EPC Space Exhibits Extreme Robustness for Space MissionsNovember 1, 2023 - 4:33 pm
GaN in Space: Unlocking Efficiency and Performance in Satellite SystemsOctober 11, 2023 - 2:49 pm
EPC Space Brings GaN to the Edge of the AtmosphereOctober 3, 2023 - 10:22 am
GaN HEMT Package Improves Paralleling Of Devices In Space Power ApplicationsSeptember 15, 2023 - 2:00 pm
Motor Driver Applications in Space
NewsAs the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability […]
Exploring the Frontiers of GaN Power Devices
NewsGallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications. Electronics WeeklySeptember, 2021Read article
Discovering GaN for Power Design in Space — An Interview with Alex Lidow
NewsUnlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation […]
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETs
NewsEPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad Hard MOSFETs. HAVERHILL, MA.— August 2021 — For […]
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Selected by Astranis for Geostationary Satellites
NewsEPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites. HAVERHILL, MA.— August 2021 — EPC Space […]
EPC Space Announces Cost Effective New 60 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications
NewsEPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments. HAVERHILL, MA.— July 2021 — […]
Spirit Electronics Podcast: What Can GaN Do in Space? Rad Hard Products and Applications
NewsSpirit Electronics Podcast: What Can GaN Do in Space? Rad Hard Products and Applications In this episode, EPC Space CEO Bel Lazar talks with Marti about the company’s product lines […]
GaN in Space Applications
NewsGallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. GaN power […]
Rad Hard Enhancement-Mode Gallium Nitride (eGaN) Power Transistor Die on Ceramic Adaptors with Space Heritage Provide ‘Plug and Play’ Functionality to Speed Time-to-Market in Critical High Reliability Designs
NewsRad Hard GaN discrete devices on adaptors are optimized to speed the time-to-market for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 — […]
Space Level Qualified Rad Hard Enhancement-Mode Gallium Nitride (eGaN®) Drivers and Power Stages with Space Heritage from EPC Space Increase Efficiency, Reduce Space and Weight in Satellite Systems
NewsRad Hard GaN drivers optimized to drive Rad Hard GaN transistors and specifically designed for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 […]