EPC Space News
Latest News
Podcast: GaN Devices for Space ApplicationsNovember 23, 2022 - 2:05 pm
EPC Space Announces Distribution Partnership with Micross for Rad-Hard Gallium Nitride (GaN) Power Devices for Space, Aerospace, and Other High Reliability ApplicationsJuly 26, 2022 - 6:00 am
Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space ApplicationsJuly 19, 2022 - 6:00 am
EPC Space Announces Ultra-Low On-Resistance 40 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space ApplicationsApril 14, 2022 - 9:00 am
EPC Space Announces Global Distribution Deal with Digi-Key for Rad Hard Gallium Nitride (GaN) Power Devices in Space, Aerospace, and Other High Reliability ApplicationsFebruary 15, 2022 - 6:00 am
Easy-to-use boards reduce time to market for rad-hard gallium nitride (GaN) power devicesFebruary 10, 2022 - 6:38 pm
Easy-to-Use Demonstration Boards Reduce Time to Market for Rad Hard Gallium Nitride (GaN) Power Devices in High Reliability and Aerospace ApplicationsJanuary 18, 2022 - 9:00 am
Motor Driver Applications in SpaceNovember 3, 2021 - 5:09 pm
Exploring the Frontiers of GaN Power DevicesSeptember 23, 2021 - 10:16 am
Discovering GaN for Power Design in Space — An Interview with Alex LidowSeptember 21, 2021 - 9:53 am
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETs
NewsEPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad Hard MOSFETs. HAVERHILL, MA.— August 2021 — For […]
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Selected by Astranis for Geostationary Satellites
NewsEPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites. HAVERHILL, MA.— August 2021 — EPC Space […]
EPC Space Announces Cost Effective New 60 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications
NewsEPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments. HAVERHILL, MA.— July 2021 — […]
Spirit Electronics Podcast: What Can GaN Do in Space? Rad Hard Products and Applications
NewsSpirit Electronics Podcast: What Can GaN Do in Space? Rad Hard Products and Applications In this episode, EPC Space CEO Bel Lazar talks with Marti about the company’s product lines […]
GaN in Space Applications
NewsGallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. GaN power […]
Rad Hard Enhancement-Mode Gallium Nitride (eGaN) Power Transistor Die on Ceramic Adaptors with Space Heritage Provide ‘Plug and Play’ Functionality to Speed Time-to-Market in Critical High Reliability Designs
NewsRad Hard GaN discrete devices on adaptors are optimized to speed the time-to-market for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 — […]
Space Level Qualified Rad Hard Enhancement-Mode Gallium Nitride (eGaN®) Drivers and Power Stages with Space Heritage from EPC Space Increase Efficiency, Reduce Space and Weight in Satellite Systems
NewsRad Hard GaN drivers optimized to drive Rad Hard GaN transistors and specifically designed for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 […]
EPC Space Announces Family of Space Level Qualified 40 V to 300 V Rad Hard Enhancement-Mode Gallium Nitride (GaN) Power Transistors
NewsRad Hard GaN discrete devices specifically designed for critical applications in the high reliability or commercial satellite space environments now available. HAVERHILL, MA.— September 2020 — EPC Space announced a […]
GaN Transistor for Space Missions
NewsGaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN® solutions, EPC Space guarantees radiation hardness performance and SEE […]
Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices
NewsEnhancement-mode gallium nitride (eGaN®) technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. eGaN devices […]