EPC Space News
Latest News
Motor Driver Applications in SpaceNovember 3, 2021 - 5:09 pm
Exploring the Frontiers of GaN Power DevicesSeptember 23, 2021 - 10:16 am
Discovering GaN for Power Design in Space — An Interview with Alex LidowSeptember 21, 2021 - 9:53 am
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETsAugust 25, 2021 - 6:00 am
Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Selected by Astranis for Geostationary SatellitesAugust 10, 2021 - 9:00 am
EPC Space Announces Cost Effective New 60 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space ApplicationsJuly 28, 2021 - 9:00 am
Spirit Electronics Podcast: What Can GaN Do in Space? Rad Hard Products and ApplicationsMarch 23, 2021 - 10:33 am
GaN in Space ApplicationsDecember 8, 2020 - 3:14 pm
Rad Hard Enhancement-Mode Gallium Nitride (eGaN) Power Transistor Die on Ceramic Adaptors with Space Heritage Provide ‘Plug and Play’ Functionality to Speed Time-to-Market in Critical High Reliability DesignsOctober 14, 2020 - 6:00 am
Space Level Qualified Rad Hard Enhancement-Mode Gallium Nitride (eGaN®) Drivers and Power Stages with Space Heritage from EPC Space Increase Efficiency, Reduce Space and Weight in Satellite SystemsOctober 6, 2020 - 6:00 am
EPC Space Announces Family of Space Level Qualified 40 V to 300 V Rad Hard Enhancement-Mode Gallium Nitride (GaN) Power Transistors
NewsRad Hard GaN discrete devices specifically designed for critical applications in the high reliability or commercial satellite space environments now available. HAVERHILL, MA.— September 2020 — EPC Space announced a […]
EPC Space Announces Spirit Electronics as Distribution Partner for Defense and Aerospace Market
NewsSpirit Electronics now provides distribution support to assist customers in adopting Rad Hard eGaN® FETs and ICs for leading-edge power conversion systems in critical spaceborne systems. HAVERHILL, MA.— September 2020 […]
GaN Transistor for Space Missions
NewsGaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN® solutions, EPC Space guarantees radiation hardness performance and SEE […]
Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices
NewsEnhancement-mode gallium nitride (eGaN®) technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. eGaN devices […]
Podcast Interview with Bel Lazar – GaN in Space
NewsEPC has teamed up with VPT, Inc. to form “EPC Space,” and according to early PR, its mission is “designing and manufacturing radiation-hardened GaN-on silicon transistors and ICs packaged, tested, […]
Aerospace GaN power company re-booted
NewsThe space-qualified GaN power transistors, driver ICs and modules of Freebird Semiconductor will now be available from EPC Space, a new company which includes Freebird and its assets, and is […]
EPC and VPT, Inc. Announce Joint Venture – EPC Space – Targeting the Radiation Hardened Power Electronics Market for Mission Critical Applications
NewsEPC Space, a joint venture company, will provide advanced, high-reliability, gallium nitride (GaN) power conversion solutions for critical spaceborne and other high reliability environments. EL SEGUNDO, CA and BLACKSBURG, VA […]