EPC Space

EPC Space Achieves Major Milestone with DLA JANS Certification and Launch of First QPL GaN Power Devices

Andover, MA, April 5, 2025, EPC Space proudly announces that its Andover, Massachusetts facility, together with its GaN foundry, have received MIL-PRF-19500 JANS certification from the Defense Logistics Agency (DLA), marking a significant advancement in high-reliability space-grade power electronics.

In a major industry first, EPC Space has also introduced the world’s first Qualified Product List (QPL) Power GaN JANS devices. The initial release includes two fully qualified parts; JANSH2N7667UFBC and JANSH2N7669UFBC, which are now available for immediate delivery.

EPC Space is continuing its commitment to innovation and reliability in the space sector by planning to qualify an additional 16 GaN JANS devices over the next 12 months, with voltage ratings ranging from 40V to 300V.

“EPC Space is thrilled to pioneer the industry’s first QPL GaN power devices, delivering a transformative solution for space-grade power electronics,” said Bel Lazar, CEO of EPC Space.

These power devices deliver superior performance over traditional silicon-based components, offering higher breakdown strength, lower gate charge, reduced switching losses, improved thermal conductivity, and lower on-resistance. These attributes enable higher switching frequencies, improved power densities and efficiencies, and significantly more compact, lightweight solutions for demanding space applications.

All EPC Space GaN JANS devices are rad hard by design and are rated for total ionizing dose (TID) greater than 1 Mrad and demonstrate Single Event Effects (SEE) immunity at LET levels of 85 MeV/(mg/cm²), ensuring robust performance in extreme environments.

Pricing: For quantities of 500 units, average pricing is $331 USD per unit.

For a complete list of qualified parts and product specifications, please refer to the matrix below.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]

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EPC Space

EPC Space Launches a High-Performance Radiation-Hardened DC-DC Controller with Matching Reference Design

Andover, MA — April 2025 – EPC Space announces the release of the EPCS4001, a radiation-hardened, high-frequency buck converter controller optimized for space and high-energy physics applications. In tandem with the EPCS4001, EPC Space also introduces the EPCSC401 reference design, offering engineers a complete, tested, and ready-to-deploy solution.

The EPCS4001 is a rad-hard CMOS ASIC, co-developed with The European Organization for Nuclear Research, known as CERN, tailored specifically for use with EPC’s GaN-based Rad Hard power stage the EPC7011L7 family. This two-component solution provides a robust and flexible point-of-load converter architecture that excels in extreme environments.

Key Features of the EPCS4001:

  • Wide Input Voltage Range: 18 V to 50 V input, with an adjustable output centered at 12 V
  • High Switching Frequency: Adjustable from 0.5 MHz to 3 MHz, enabling use of compact inductors from 200–500 nH.
  • Integrated Bias Regulators: On-chip 12 V and 5 V linear regulators eliminate the need for external bias circuitry.
  • Protection & Telemetry: Built-in under-voltage lockout (UVLO), over-temperature protection, and Power Good signal for fault monitoring.
  • Radiation and Magnetic Tolerance: Operates reliably in environments with very high radiation. The controller has been designed for operation in a strong magnetic field in excess of 40,000 Gauss.
  • Fully Compatible with EPC GaN Power Stages: Designed to pair with the EPC7011L7 family, enabling radiation-hardened power conversion in compact form factors.

EPCSC401 Reference Design – Turnkey Performance

To support rapid design-in, EPC Space has released the EPCSC401 reference design, a 48 V-to-12 V buck converter that demonstrates the full capabilities of the EPCS4001 and EPC7011L7 family in a compact layout. It features:

  • Pre-optimized PCB layout for minimal loop inductance and maximum efficiency.
  • Compatibility with both cored and coreless inductors, allowing designers to tailor magnetic components for application-specific needs, including high magnetic field environments.
  • Verified thermal performance with conduction cooling and integrated heatsinking for space-like conditions.

“Our customers asked for a simplified path to integrate GaN-based, radiation-hardened DC-DC conversion into their systems, and the EPCS4001 with the EPCSC401 reference design delivers exactly that,” said Maurizio Salato, VP of Engineering at EPC Space.

Applications

  • Spacecraft power systems
  • High Energy Physics instrumentation
  • Radiation-tolerant point-of-load converters
  • Defense and aerospace systems requiring high efficiency and compact size

Availability

The EPCS4001 controller and EPCSC401 reference design are available now. Datasheets, user guides, and design files can be accessed through epc.space.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]

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EPC Space

EPC Space Achieves GaN JANS MIL-PRF-19500 Certification

Andover, Massachusetts and El Segundo California – December 2024 – EPC Space, a leader in radiation-hardened (Rad Hard) GaN-on-silicon transistors and ICs, is pleased to announce that both its Andover, Massachusetts facility and its wafer fabrication facility in Taiwan have been certified under the JANS MIL-PRF-19500 standard.

This certification marks a significant milestone, highlighting EPC Space’s commitment to excellence and its role as a leader in providing top-tier semiconductor solutions for critical space applications. The MIL-PRF-19500 certification, managed by the U.S. Department of Defense, sets the bar for reliability, performance, and environmental resilience in semiconductor components. EPC Space’s achievement in obtaining this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) is a world first.

Bel Lazar, CEO of EPC Space, commented, “Securing the JANS certification is a direct result of our relentless pursuit of quality. Our teams have worked tirelessly to ensure our products not only meet but exceed the expectations for reliability in the most demanding conditions.”

Alex Lidow, CEO of EPC Corporation, commented, “that the commitment to the MIL-PRF-19500 standard not only guarantees the durability and performance of EPC Space’s products but also reinforces the company’s dedication to supporting its customers in achieving their critical objectives.”

Looking ahead, EPC Space is set to launch 18 JANS certified Rad Hard GaN HEMT parts, ranging from 40V to 300V, throughout 2025. This expansion will further solidify EPC Space’s role as a key supplier of high-reliability electronics, crucial for space missions and other high-stakes applications.

For more information on EPC Space and EPC visit our websites:

https://epc.space
https://epc-co.com

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]

For more information or assistance, please contact our team at [email protected]

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EPC Space

EPC Space Launches Rad Hard HEMTKY Product line

Andover, MA — November 2024 — EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.

A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
• Predictable conduction losses, no reverse recovery charge
• Reduced system sensitivity to half-bridge deadtime variance
• Reduced negative voltage stress on gate drivers
Andover, MA — November 2024 — EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.

A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
• Predictable conduction losses, no reverse recovery charge
• Reduced system sensitivity to half-bridge deadtime variance
• Reduced negative voltage stress on gate drivers

Price & Availability
For 500-unit quantities, engineering models are priced at $212 USD each, while space level units are priced at $315 USD each.

About EPC Space
EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact
EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]
For more information or assistance, please contact our team at [email protected]

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EPC Space

EPC Space to Showcase Innovative Radiation-Hardened Solutions at IEEE Nuclear & Space Radiation Effects Conference

Andover, MA — July 2024 — EPC Space, a leading provider of radiation hardened (Rad Hard) GaN-on-silicon transistors and ICs for satellite and other high-reliability applications, announces its participation in the IEEE Nuclear & Space Radiation Effects Conference (NSREC) taking place from July 22-26, 2024, in Ottawa, Canada. EPC Space will present its latest radiation-hardened GaN technology, highlighting solutions designed to meet the rigorous demands of space applications.

The IEEE NSREC is a premier event that brings together experts in radiation effects, engineers, and scientists to discuss the latest developments in radiation-hardened electronics and systems. EPC Space’s participation underscores its commitment to advancing the state-of-the-art in radiation-hardened power management and contributing to the evolution of space technologies.

In booth 415/417, EPC Space will showcase its portfolio of radiation-hardened GaN power transistors and ICs, demonstrating their superior performance, efficiency, and reliability in harsh radiation environments. Attendees will have the opportunity to see live demonstrations of EPC Space’s cutting-edge GaN technology, highlighting its capabilities in real-world applications.

“We are excited to be part of the IEEE Nuclear & Space Radiation Effects Conference and to showcase our innovative radiation-hardened GaN solutions,” said Bel Lazar, CEO of EPC Space.

To schedule a meeting with EPC Space during the conference, send a request to [email protected]

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, motor drives, and ion thrusters.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 email: [email protected]

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EPC Space

40 V Rad Hard GaN FETs Set New Performance Standards for Space Applications


EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) Discrete family for critical spaceborne and other high reliability environments.

Andover, MA.— June 2024 — EPC Space announces the introduction two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. The EPC7001BSH is a Rad-Hard eGaN® 40 V, 50 A, 11 mΩ Surface Mount (FSMDB) and the EPC7002ASH is a Rad-Hard eGaN 40 V, 15 A, 28 mΩ Surface Mount (FSMDA). Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints. 

EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC Space’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.

Part NumberDrain to Source Voltage (VDS)Drain to Source Resistance (RDS(on))Single-Pulse Drain Current (IDM)Package Size (mm)Total Dose  (TID)Heavy Ion Single Event Effects (SEE)
EPC7001BSH4011 mΩ1205.7 x 3.91 MradSEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown
EPC7002ASH4028 mΩ403.4 x 3.41 MradSEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

“These two new additions to our rad-hard product line offer designers high power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.

Price & Availability

500 units pricing of $212.80/ea for engineering models and $315.84/ea for space level grade. Products are available with lead-times of 4 and 12 weeks or less for Engineering modes and Space levels respectively.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 email: [email protected]

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EPC Space

EPC Space Launches Rad Hard GaN Gate Driver IC

El Segundo, CA and Andover, MA — March 2024 — EPC Space announces the launch of EPC7009L16SH, a Radiation Hardened Gallium Nitride gate driver integrated circuit (IC.) Built on EPC’s proprietary eGaN® IC technology, this new GaN driver enables design engineers to unlock the true potential of eGaN FET technology. 

EPC7009L16SH delivers the best solution for power management where size, efficiency and simple design are critical. The EPC7009L16SH integrates input logic interface, undervoltage lockout (UVLO) protection, a 10V-to-5.25V linear regulator and driver circuit within an innovative, space efficient, hermetic 16-pin SMT package to create a high-speed driver that can switch at rates of up to 3.0 MHz. The total ionizing dose is guaranteed to 1000 kRad and the SEE immunity for LET at 84 MeV/mg/cm2 with the IC’s primary supply voltage at 100% of its maximum operating value.

eGaN transistors are becoming the transistor of choice in Space for applications where higher switching frequency, power and radiation hardness are required.  With the introduction of the EPC7009L16SH driver the full potential of eGaN HEMTs is unleashed, which is not possible with the current silicon-based drivers.  Moreover, EPC7009L16SH can drive at least four EPC Space discrete GaN devices.

IC products make it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to implement, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.

“Integrated Rad Hard GaN-on-silicon offers higher performance in a smaller footprint, while meeting all radiation hardness requirements for space applications” says Max Zafrani, EPC Space’s CTO.

The EPC7009L16SH is part of a new family of space-level Rad Hard ICs that EPC and EPC Space will be launching starting this year. Rad Hard ICs are the next significant stage in the evolution of Rad Hard GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.

EPC7009L16SH applications include high speed DC-DC conversion, motor drivers, power switches/actuators, and satellite electrical systems.

For 1000-unit quantities engineering models are priced at 350 USD, and Rad Hard space qualified are priced at 522 USD.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]

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EPC Space

EPC Space and Avnet Announce Distribution Agreement for Rad Hard GaN Power Devices

Avnet to distribute EPC Space Rad Hard GaN power devices to service high reliability and aerospace applications.

Andover, MA.— March 2024 — EPC Space today announced a distribution agreement with Avnet, a global distributor of electronic components and services. Avnet will be a global distributor for EPC Space’s line of radiation hardened (Rad Hard) GaN power devices qualified for satellite and high-reliability applications.

EPC Space offers a family of Rad Hard power GaN devices that includes discrete transistors, Integrated Circuits (ICs), and Modules that offer significant performance advantages over competitive silicon-based space level power devices. EPC Space’s GaN technology devices are smaller, have lower resistance, and have superior switching performance compared to silicon-based components and solutions. 

Critical spaceborne applications that benefit from the performance improvements that EPC Space devices offer include satellite’s DC-DC converters, reaction and momentum wheels, solar array drive assembly, micro-pumps for propulsion systems, and more.

“Partnering with Avnet, a global leader in distribution solutions, allows EPC Space to offer timely and reliable service to customers seeking high reliability GaN power solutions,” said Bel Lazar, EPC Space’s CEO.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride (eGaN®) power management solutions for space and other harsh environments. Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger: +1-908.619.9678 email: [email protected]

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EPC Space

EPC Space Launches World’s First Rad Hard GaN Power Stage IC

El Segundo, CA and Andover, MA — February 2024 — EPC Space announces the launch of a 50 V, 6 A Rad Hard GaN Power Stage IC designed for space applications. The EPC7011L7SH is a single chip driver plus eGaN® FET half-bridge power stage IC in a compact Aluminum Nitride ceramic surface mount technology package. Integration is implemented using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip with high-speed switching capability of 2+ MHz.

IC products make it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to implement, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.

“Integrated Rad Hard GaN-on-silicon offers higher performance in a smaller footprint, while meeting all radiation hardness requirements for space applications” says Bel Lazar, EPC Space CEO.

The EPC7011L7SH is part of a family of space level Rad Hard ICs that EPC and EPC Space will be launching starting this year. Rad Hard ICs are the next significant stage in the evolution of Rad Hard GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.

EPC7011L7SH applications include single and multi-phase motor drivers for reaction wheel assemblies (RWAs), robotic actuators, and point of load converters.

For 1000-unit quantities engineering models are priced at 445 USD, and Rad Hard space qualified are priced at 665 USD.

For product details, please see EPC7011L7SH page here

For more information on EPC and EPC Space visit our websites:

https://epc-co.com

https://epc.space

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]

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EPC Space

EPC Space’s Rad Hard Products Fuel Next Generation of Development Kits for Space Data Processing

ANDOVER, MA, USA and Edinburgh, Scotland, UK – December 2023 – EPC Space is proud to collaborate with Alpha Data, a prominent innovator in FPGA-based acceleration boards, in the development of the ADK-VA601 Versal™ AI Core Development Kit for Space 2.0. This groundbreaking kit, featuring a fully radiation-tolerant reference design in a deployable VPX format, accelerates the development of adaptable processors for space applications.

The ADK-VA601, an adaptive System on Module (SoM), supports on-board processing (OBP) and on-orbit reconfiguration, enabling multi-sensor data fusion, capacity growth, and the convergence of ground and space networks. ADK-VA601 was developed in collaboration with Texas Instruments, EPC Space, and other industry leaders, and it uses EPC Space’s EPC7019G which is part of EPC Space’s latest generation of radiation hardened devices. Complete list can be found at https://epc.space/products/gan-discretes/. 

David Miller, Managing Director, commented: “We’re offering this as a complete development kit but in an already deployable format which makes it more relevant to customers and streamlines the adaptation process for specific mission requirements. The industry is moving from custom hardware towards modular standards that enable shorter design cycles and cost reduction. End users may still want to do some fine tuning and customization, but if 90 percent of the work has already been done by us, they can get to space much quicker. That’s the core concept behind this product.”

Bel Lazar, EPC Space CEO, commented: “In addition to our efforts in designing in Radiation Hardened (Rad Hard) GaN solutions in all new space power sockets as a viable alternative to the aging Rad Hard silicon devices, we are also addressing Rad Hard solutions for space bound development kits such as the next generation of on-orbit processing that accelerates the development timeline of space missions.

About Alpha Data

Alpha Data is a world leader in the FPGA-based acceleration boards used in high-performance computing, and rugged embedded computing.

With design canters strategically located in both the US and the UK, Alpha Data provides an international customer base with high-reliability, state-of-the-art solutions for deployment on land, at sea, in the air and in space.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger tel: +1.908.619.9678 email: [email protected]

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