As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
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EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

Electronics Weekly
August, 2023
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GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.

Power Electronics News
August, 2023
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EPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments.

Andover, MA.— August 2022 — EPC Space announces the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints. 

The EPC7020G is a 200 V, 14.5 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor and the EPC7030G is a 300 V, 32 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor. These devices join the 40 V, 4.5 mΩ EPC7019G and the 100 V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.

Part NumberDrain to Source Voltage (VDS)Drain to Source Resistance (RDS(on))Single-Pulse Drain Current (IDM)
EPC7019G40 V4 mΩ530 A
EPC7018G100 V6 mΩ345 A
EPC7020G200 V14.5 mΩ200 A
EPC7030G300 V32 mΩ200 A

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

“The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.

Price & Availability

Contact factory for price, availability, and delivery.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger, +1 908 619 9678 email: renee.yawger@epc.space

GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments.

Andover, MA.— July 2022 — EPC Space announces the introduction two new rad-hard GaN transistors with ultra-low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints.  Chip-scale versions of this device are available from EPC.

Part NumberDrain to Source Voltage (VDS)Drain to Source Resistance (RDS(on))Single-Pulse Drain Current (IDM)Package Size (mm)Total Dose for Space Level ApplicationsSingle Event (with VDS up to 100% of rated Breakdown) for Space Level Applications
EPC7018G100 V6 mΩ345 A8.0 x 5.6Rated to 1000 kradSEE immunity for LET of 85 MeV/mg/cm2
EPC7007B200 V28 mΩ80 A5.7 x 3.9Rated to 1000 kradSEE immunity for LET of 85 MeV/mg/cm2

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

“These two new additions to our rad-hard product line offer designers high power, ultra-low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.

Price & Availability

EPC7018G and EPC7007B:

500 units pricing of $ $212.80/ea for engineering models and $315.84/ea for space level grade.

Contact factory for availability and delivery.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 email: renee.yawger@epc.space

EPC Space introduces a new 40 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments.

Andover, MA.— April 2022 — EPC Space announces the introduction of EPC7019G, a 40 V, 4 mΩ, 530 Apulsed, radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. The EPC7019G has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices come packaged in a new compact hermetic package with dual gate in a footprint less than 45 mm2. Chip-scale versions of this device are available from EPC.

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes.

“The EPC7019G is the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “This device offers a mission-critical component with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.

Price & Availability

500 units pricing of $212 each for engineering models and $315 each for space level grade. Contact factory for availability and delivery.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger, +1 908 619 9678 email: renee.yawger@epc.space

HAVERHILL, MA.— February 2022 — EPC Space today announced that Digi-Key Electronics will be a global distributor for EPC Space’s line of radiation hardened (rad hard) GaN-on-silicon transistors and ICs, packaged, tested, and qualified for satellite and high-reliability applications.

Spanning a range of 40 V to 300 V, EPC Space offers a family of rad hard enhancement mode power transistors. These power transistors demonstrate significant performance advantages over competitive silicon-based rad hard power MOSFETs. EPC Space technology produces GaN devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions. 

Digi-Key will also distribute EPC Space’s family of rad hard enhancement mode GaN drivers and power stages. Rad hard GaN drivers are optimized to drive rad hard GaN transistors in critical spaceborne systems.  Rad hard power stages integrate a high-speed gate drive circuit with power switches to provide a monolithic complete power stage in a tiny footprint for smaller, lower weight systems. 

The drivers and power stages product line includes ultra-fast, low-side eGaN® drivers, ultra-fast, dual low-side eGaN drivers, and half-bridge drivers with integrated eGaN power switches. 

Critical spaceborne applications that benefit from the performance improvements that these devices offer include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.

“The addition of EPC Space’s rad hard gallium nitride-based power management products completes the entire EPC’s product portfolio through Digi-Key and brings intriguing next-generation breakthrough benefits to existing silicon-based solutions,” said David Stein, vice president of global supplier management for Digi-Key. “We are thrilled to be able to offer these innovative products to the high reliability engineering community.”

Digi-Key has the fastest global logistics and the most efficient supply chain to service customers from early engineering through volume production. Digi-Key’s world-class distribution capabilities will translate into fast and easy service to our global customers who want to access the entire line of EPC’s GaN power device products to replace their less-efficient, more costly silicon solutions,” said Bel Lazar, EPC Space’s CEO.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride (eGaN®) power management solutions for space and other harsh environments. Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger tel: +1-908.619.9678 email: renee.yawger@epc.space

EPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation-hardened (RH) gallium nitride (GaN) power devices into their high reliability and aerospace applications.

Satellite Evolution Group

February 9th, 2022
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EPC Space is providing easy-to-use demonstration boards ideal for evaluating the feature and capabilities of Rad Hard GaN power devices.

HAVERHILL, MA.— January 2022 — EPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation hardened (RH) gallium nitride (GaN) power devices into their high reliability and aerospace applications.

A new family of demonstration boards offers fast prototyping and evaluation of the features and capabilities of EPC Space Rad Hard eGaN power devices. The offering includes the following: 1) a trio of low-side driver demo boards, EPC7C001, EPC7C002, EPC7C003, which utilize the EPC Space’s eGaN gate driver modules to drive a corresponding 40V, 100V, or 200V discrete eGaN FET; 2) EPC7C005 demonstration board that allows evaluation of the switching operation and conversion efficiency performance of the FBS-GAM02-P-C50 Rad Hard power module connected as a half-bridge point-of-load (POL) output stage; and 3) the EPC7C006 demo board which is a three-phase motor  demonstration board that utilizes the FBS-GAM02-P-R50 module.

“Radiation Hardened eGaN FETs and ICs offer designers improved performance, lower cost, and shorter delivery times compared to RH silicon-based devices, said Bel Lazar, CEO of EPC Space. “We are happy to provide an easy-to-use evaluation platform to assist designers looking to convert their RH silicon designs to take advantage of the higher power densities, higher efficiencies, and better cost and delivery that GaN offers.”

EPC Space Demonstration Boards

EPC Space P/NDescriptionFeatured Products
EPC7C001FBS-GAM01P-PSE FBG04N30 Demo BoardFBS-GAM01P-PSE, FBG04N30
EPC7C002FBS-GAM01P-PSE FBG10N30 Demo BoardFBS-GAM01P-PSE, FBG10N30
EPC7C003FBS-GAM01P-PSE FBG20N18 Demo BoardFBS-GAM01P-PSE, FBG20N18
EPC7C005FBS-GAM02-P-C50 POL Eval. BoardFBS-GAM02-P-C50
EPC7C006EPCS-GAM02-P-C50 3-Phase Motor Control Motherboard/Eval. BoardFBS-GAM02-P-R50

Price and Availability

5-unit pricing starts at $850/each with lead times of 6 weeks.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger tel: +1-908.619.9678 email: renee.yawger@epc.space