EPC7012L7SH – EPC Space

Specifications

Parameters

Screening Level	Space S
Configuration	Half Bridge Power Stage
V_DD	80 V
I_OUT	6 A
V_BIAS	12 V
R_DS(on)	22 mΩ
Max frequency	2 MHz
Input Logic	3.0 V
LET	300 _kRad LET= 61 M_eV/mg/cm²
Package	L7 AIN Ceramic (6.35 mm x 5.08 mm)

Features

80 V_DC/6 A Half-Bridge Driver
14 mΩ (typ), integrated high-side and low-side eGaN^® FETs
Integrated GaN gate driver and level-shifter
12 V external bias supply
3.3 V or 5 V CMOS input logic level
Independent high side and low side control inputs
Logic Input Shoot-Through Protection, commands both FETs off when control inputs are both high at same time
Internal Under-Voltage Lockout UVLO) Circuitry
Synchronous charging for high side bootstrap supply
Flexible power-sequencing with active gate pull-down for HS and LS FET allows for V_IN before V_BIAS power-up
High Speed Switching Capability: 2+ MHz
Compact AlN Ceramic SMT Package (L7)
Total Ionizing Dose:
- Rated to 300 k_RAD
Single Event:
- SEE immunity for LET of 61 M_eV/mg/cm²
  with V_DD up to 100% of Rated Voltage
Neutron Fluence:
- Maintains specification up to 1 x 10¹⁵ N/cm²

Description

The EPC Space EPC7012L7SH, is a radiation-hardened, half-bridge GaN power stage. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN^® output FETs configured as a half-bridge, are integrated within a monolithic chip in a custom 7-pin Aluminum Nitride SMT ceramic package. Datasheet parameters are “Post Radiation Effects.” 80 V_DC maximum operating voltage, 100V rated internal power transistors.

Applications

Datasheet

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Technical Documents

EPC7012L7SH Datasheet
Altium

Quality Documents

Parts are fully qualified per EPC Space stringent qualification requirements. Reports are available upon request. Please contact [email protected] for further information

Conflict Mineral Statement

Export Classification

ITAR Controlled? No

EAR? Yes

ECCN? 9A515.e

ECCN classification 9A515.e allows for the export of this product to many countries with no license required.

See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.

EPC7012L7SH – 80 V_DC/6 A
Radiation-Hardened GaN Power Stage

Specifications

Technical Documents

Quality Documents

Export Classification

Contact EPC Space

EPC7012L7SH – 80 VDC/6 A Radiation-Hardened GaN Power Stage

Specifications

Technical Documents

Quality Documents

Export Classification

Contact EPC Space

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EPC7012L7SH – 80 V_DC/6 A
Radiation-Hardened GaN Power Stage