EPC’s eGaN® power switching transistors have been specifically designed for critical applications in DC-DC conversion. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact packaging. EPC7066PCSH has been specifically designed for synchronous rectifier applications on the secondary side of a 48 V–8 or 5 V LLC converter, where it brings an industry leading low RDS(on) x QG figure of merit and enables higher frequency and higher efficiency operation. EPC7066PCSH is also for point of load buck converters.