Package dimensions: 0.75″L x 0.38″W x 0.125″H (maximum)
Radiation hardness assured (RHA) for “R” version
EPC Space’s “GaN Driving GaN Technology” Series FBS-GAM01-P-C/R50/100 Single Low-Side Power Driver Module incorporates eGaN® switching power HEMTs. These devices feature an integrated output clamp Schottky diode, and are driven by a integrated high-speed gate driver consisting entirely of eGaN® switching elements. Additionally, the 5 Vdc gate driver VBIAS power supply is provided with over-voltage clamping protection along with under-voltage driver disable and reporting and contained in an innovative, space-efficient, 9 pin SMT over-molded epoxy package, covered under US Patent #10,122,274 B2.
The “C” version is the commercial development vehicle for engineering brassboard use or for demanding, non rad-hard industrial applications.
The “R” version is the RHA flight-ready, Commerce-rated EAR-99 Device.