FBSGAM01PRPSE - EPC Space

Specifications

Parameters

V_BIAS Operating Range

4.50 to 5.50 V

Output capacitance

2000 pF, typical and 5000 pF, maximum

Pull-up/pull-down resistance

Pull-up: 2.5 Ohms, typical, 25ºC
Pull-down: 2.5 Ohms, typical, 25ºC

Operating frequency range

DC to 3MHz+

Maximum duty cycle

100%

V_BIAS Operating Current

10.5 mA, maximum

Switching times, typical, 25ºC, 10 A

t_d(on)/t_d(off):

30 ns/30 ns, typical, 25ºC

C_out=	1000 pF	2200 pF	5000 pF
t_r:	32 ns	49 ns	71 ns typical, 25ºC
t_f:	21 ns	33 ns	55 ns typical, 25ºC

Operating temperature range -55 to +110ºC

Features

Single ground-referenced or floating eGaN HEMT gate driver for any discrete HEMT in the EPC Space portfolio
Capable of driving multiple, paralleled GaN HEMTs
Internal gate driver V_BIAS power supply over-voltage clamp for added protection
Integrated UVLO/Power Good detection and reporting circuitry
Power Good/(low-true) Shutdown bidirectional I/O feature
3.3 V compatible logic input
9 pin, low-profile over-molded SMT package with unique “pillar” I/O pads
Package dimensions: 0.50″L x 0.38″W x 0.125″H
“Gan-Driving-GaN” technology
High speed
Radiation hardness assured (RHA) for “R” version

Description

EPC Space’s “GaN Driving GaN Technology” Series FBS-GAM01P-C/R-PSE Single Low-Side Gate Driver Module is a high-speed gate driver consisting entirely of eGaN^® switching elements. Additionally, the 5 Vdc gate driver V_BIAS power supply is provided with over-voltage clamping protection along with under-voltage driver disable and reporting. The module also provides a bidirectional Power Good/Shutdown pin. The FBS-GAM01P-C/R-PSE is contained in an innovative, space-efficient, 9 pin SMT over-molded epoxy package, covered under US Patent #10,122,274 B2.

The “C” version is the commercial development vehicle for engineering brassboard use as a development platform for the “R” flight version, or for demanding, non rad-hard industrial applications.
The “R” version is the RHA flight-ready, Commerce-rated EAR-99 Device.

Applications

Datasheet

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Technical Documents

FBS-GAM01P-R-PSE Datasheet

LTSpice

How to use EPC Space LT Spice Models

EPC Space Module LT Spice Convergence

Quality Documents

Parts are fully qualified per EPC Space stringent qualification requirements. Reports are available upon request. Please contact info@epc.space for further information

Conflict Mineral Statement

Product Change Notice

PCN-2302 GAM Product Line Solder Dipping/Tinning

Screening Level

Development Parts

Parts that are assembled using same processes and line as space level parts but not screened and with no radiation hardness guarantee.

Radiation Hardened Parts

Radiation hardened units with space level screening.

Export Classification

ITAR Controlled? No

EAR? Yes

ECCN? 9A515.e

ECCN classification 9A515.e allows for the export of this product to many countries with no license required.

See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.

FBS-GAM01P-R-PSE – Radiation-Hardened Single Output eGaN^® Gate Driver Development Module

Specifications

Technical Documents

Quality Documents

Screening Level

Export Classification

Contact EPC Space

FBS-GAM01P-R-PSE – Radiation-Hardened Single Output eGaN® Gate Driver Development Module

Specifications

Technical Documents

Quality Documents

Screening Level

Export Classification

Contact EPC Space

Sign up for EPC Space contact list

FBS-GAM01P-R-PSE – Radiation-Hardened Single Output eGaN^® Gate Driver Development Module