EPC Space’s FBS-GAM02P-C/R-PSE Series Low- and High-Side Gate Driver Modules are dual high-speed gate drivers consisting entirely of eGaN® switching elements. The module’s 5 V VBIAS power supply is provided with under-voltage detection, driver disable and reporting and low-true and high-true Shutdown inputs. The module also includes input shoot-though protection for situations where the module is connected as a half-bridge driver. Furthermore, the “bootstrap” diode and capacitor for the high-side gate driver are included in the module. The FBS-GAM02P-C/R-PSE is contained in an innovative, space-efficient, 18 pin SMT over-molded epoxy package, covered under US Patent #10,122,274 B2.
The “C” version is the commercial development vehicle for engineering brassboard use as a development platform for the “R” flight version, or for demanding, non rad-hard industrial applications.
The “R” version is the RHA flight-ready, Commerce-rated EAR-99 Device.
Dual Independent GaN HEMT gate drivers for the discrete eGaN power HEMTs in the EPC Space portfolio up to 100 V
Low- and High-side gate drivers for multiple paralleled eGaN power HEMTs up to 100 V
Half-bridge power stage driver with input shoot-through protection