No wire bond for higher reliability and low inductance
Rated > 1 Mrad
SEE immunity for LET of 85 MeV/mg/cm2 with VDS up to 100% of rated Breakdown
Low Dose Rate at 100 mRad/sec
Maintains Pre-Rad specification
Maintains Pre-Rad specification for up to 3 x 1015 Neutrons/cm2
Rad Hard eGaN® transistors have been specifically designed for critical applications in the high reliability or commercial satellite space environments. GaN transistors offer superior reliability performance in a space environment because there are no minority carriers for single event, and as a wide band semiconductor there is less displacement for protons and neutrons, and additionally there is no oxide to breakdown.
These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact designs.