Products
Rad Hard GaN Drivers and Power Stages IC’s
Introducing EPC Space Rad Hard GaN ICs which are engineered for aerospace, satellite, and harsh-environment applications. With unmatched radiation hardness and the efficiency of Gallium Nitride (GaN) technology, these circuits ensure reliability and peak performance in demanding conditions. Elevate your mission-critical systems with our robust solutions for optimal power management and control.
Looking for GaN Technology for Consumer and Industrial Applications? – Discover how GaN technology is revolutionizing power conversion across various industries. Visit EPC.
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Excel spreadsheet| Part Number | Screening Level | Configuration | VDD (V) | IOUT (A) | Input Logic | Max Frequency | UVLO | LET (1000 kRad) | Package |
|---|---|---|---|---|---|---|---|---|---|
| EPC7009L16SH | Space | Low side Gate driver | 3.0 V | 3 MHz | 84 | 16 Pin QLCC SMT | |||
| EPC7011L7C | COT | Half Bridge Power Stage | 60 | 6 | 3.0 V | 2 MHz | 9 | - | L7 Ceramic (6.35 mm x 5.08 mm) |
| EPC7011L7BH | Space B | Half Bridge Power Stage | 60 | 6 | 3.0 V | 2 MHz | 9 | 1000 kRad LET= 84 MeV/mg/cm2 | L7 AIN Ceramic (6.35 mm x 5.08 mm) |
| EPC7011L7SH | Space S | Half Bridge Power Stage | 60 | 6 | 3.0 V | 2 MHz | 9 | 1000 kRad LET= 84 MeV/mg/cm2 | L7 AIN Ceramic (6.35 mm x 5.08 mm) |
| EPC7012L7C | COT | Half Bridge Power Stage | 60 | 6 | 3.0 V | 2 MHz | 9 | - | L7 AIN Ceramic (6.35 mm x 5.08 mm) |
| EPC7012L7BH | Space B | Half Bridge Power Stage | 60 | 6 | 3.0 V | 2 MHz | 9 | 1000 kRad LET= 63 MeV/mg/cm2 | L7 AIN Ceramic (6.35 mm x 5.08 mm) |
| EPC7012L7SH | Space S | Half Bridge Power Stage | 60 | 6 | 3.0 V | 2 MHz | 9 | 1000 kRad LET= 63 MeV/mg/cm2 | L7 AIN Ceramic (6.35 mm x 5.08 mm) |
For more information or to purchase GaN products please contact [email protected]
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