FBSGAM02PCPSE – EPC Space

Specifications

Parameters

External Switch Operating Voltage

50 V de-rated (100 V rated)

V_BIAS Operating Range

4.75 to 5.25 V

Output capacitance

5000 pF

Pull-up/pull-down resistance

Pull-up: 2.5 Ohms, typical, 25ºC
Pull-down: 2.5 Ohms, typical, 25ºC

Operating frequency range

DC to 3MHz+

Maximum duty cycle low-side/high side

100%/95%

V_BIAS Operating Current

20 mA, maximum

Switching times, typical, 25ºC, 10 A

Low-side t_d(on)/t_d(off):	22 ns/22 ns, typical, 25ºC
High-side t_d(on)/t_d(off):	45 ns/60 ns, typical, 25ºC

C_out=	1000 pF	2200 pF	5000 pF
Low-side t_r:	35 ns	45 ns	70 ns typical, 25ºC
Low-side t_f:	22 ns	33 ns	55 ns typical, 25ºC

C_out=	1000 pF	2200 pF	5000 pF
High-side t_r:	38 ns	49 ns	75 ns typical, 25ºC
High-side t_f:	25 ns	38 ns	60 ns typical, 25ºC

Operating temperature range -40 to +85ºC

Features

Low-and High-Side eGaN power HEMT gate drivers
Capable of driving multiple paralleled discrete eGaN power HEMT in the EPC Space portfolio up to 100V breakdown
Integrated input shoot-through protection logic
Integrated UVLO/Power Good detection and reporting circuitry
Power Good output feature
Low-and high-true Shutdown inputs
3.3 V compatible logic inputs
18 pin, low-profile over-molded SMT package with unique “pillar” I/O pads
Package dimensions: 1.00″L x 0.75″W x 0.125″H
“Gan-Driving-GaN” technology
High speed

Description

EPC Space’s FBS-GAM02P-C/R-PSE Series Low- and High-Side Gate Driver Modules are dual high-speed gate drivers consisting entirely of eGaN^® switching elements. The module’s 5V V_BIAS power supply is provided with under-voltage detection, driver disable and reporting and low-true and high-true Shutdown inputs. The module also includes input shoot-though protection for situations where the module is connected as a half-bridge driver. Furthermore, the “bootstrap” diode and capacitor for the high-side gate driver are included in the module. The FBS-GAM02P-C/R-PSE is contained in an innovative, space-efficient, 18 pin SMT over-molded epoxy package, covered under US Patent #10,122,274 B2.

The “C” version is the commercial development vehicle for engineering brassboard use as a development platform for the “R” flight version, or for demanding, non rad-hard industrial applications.
The “R” version is the RHA flight-ready, Commerce-rated EAR-99 Device.

Applications

Datasheet

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Technical Documents

FBS-GAM02P-C-PSE Datasheet

Quality Documents

Parts are fully qualified per EPC Space stringent qualification requirements. Reports are available upon request. Please contact [email protected] for further information

Conflict Mineral Statement

Product Change Notice

PCN-2302 GAM Product Line Solder Dipping/Tinning

Screening Level

Development Parts

Parts that are assembled using same processes and line as space level parts but not screened and with no radiation hardness guarantee.

Radiation Hardened Parts

Radiation hardened units with space level screening.

Export Classification

ITAR Controlled? No

EAR? Yes

ECCN? 9A515.e

ECCN classification 9A515.e allows for the export of this product to many countries with no license required.

See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.

FBS-GAM02P-C-PSE – 50 V_DC High-Speed Multifunction Power eGaN^® HEMT Driver

Specifications

Technical Documents

Quality Documents

Screening Level

Export Classification

Contact EPC Space

FBS-GAM02P-C-PSE – 50 VDC High-Speed Multifunction Power eGaN® HEMT Driver

Specifications

Technical Documents

Quality Documents

Screening Level

Export Classification

Contact EPC Space

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FBS-GAM02P-C-PSE – 50 V_DC High-Speed Multifunction Power eGaN^® HEMT Driver