External Switch Operating Voltage | 50 V de-rated (100 V rated) | ||||||||||||||||
VBIAS Operating Range | 4.50 to 5.50 V | ||||||||||||||||
Output capacitance | 5000 pF | ||||||||||||||||
Pull-up/pull-down resistance | Pull-up: 2.5 Ohms, typical, 25ºC Pull-down: 2.5 Ohms, typical, 25ºC |
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Operating frequency range | DC to 3MHz+ | ||||||||||||||||
Maximum duty cycle low-side/high side | 100%/95% | ||||||||||||||||
VBIAS Operating Current | 20 mA, maximum | ||||||||||||||||
Switching times, typical, 25ºC, 10 A | |||||||||||||||||
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Cout= | 1000 pF | 2200 pF | 5000 pF |
High-side tr: | 38 ns | 49 ns | 75 ns typical, 25ºC |
High-side tf: | 25 ns | 38 ns | 60 ns typical, 25ºC |
Operating temperature range -55 to +110ºC
- Low-and High-Side eGaN power HEMT gate drivers
- Capable of driving multiple paralleled discrete eGaN power HEMT in the EPC Space portfolio up to 100 V breakdown
- Integrated input shoot-through protection logic
- Integrated UVLO/Power Good detection and reporting circuitry
- Power Good output feature
- Low-and high-true Shutdown inputs
- 3.3 V compatible logic inputs
- 18 pin, low-profile over-molded SMT package with unique “pillar” I/O pads
- Package dimensions: 1.00″L x 0.75″W x 0.125″H
- “Gan-Driving-GaN” technology
- High speed
- Radiation hardness assured (RHA) for “R” version
EPC Space’s FBS-GAM02P-C/R-PSE Series Low- and High-Side Gate Driver Modules are dual high-speed gate drivers consisting entirely of eGaN® switching elements. The module’s 5 V VBIAS power supply is provided with under-voltage detection, driver disable and reporting and low-true and high-true Shutdown inputs. The module also includes input shoot-though protection for situations where the module is connected as a half-bridge driver. Furthermore, the “bootstrap” diode and capacitor for the high-side gate driver are included in the module. The FBS-GAM02P-C/R-PSE is contained in an innovative, space-efficient, 18 pin SMT over-molded epoxy package, covered under US Patent #10,122,274 B2.
The “C” version is the commercial development vehicle for engineering brassboard use as a development platform for the “R” flight version, or for demanding, non rad-hard industrial applications.
The “R” version is the RHA flight-ready, Commerce-rated EAR-99 Device.
- Dual Independent GaN HEMT gate drivers for the discrete eGaN power HEMTs in the EPC Space portfolio up to 100 V
- Low- and High-side gate drivers for multiple paralleled eGaN power HEMTs up to 100 V
- Half-bridge power stage driver with input shoot-through protection
Quality Documents
Parts are fully qualified per EPC Space stringent qualification requirements. Reports are available upon request. Please contact [email protected] for further information
Product Change Notice
Export Classification
ITAR Controlled? No
EAR? Yes
ECCN? 9A515.e
ECCN classification 9A515.e allows for the export of this product to many countries with no license required.
See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.