Andover, MA — November 2024 — EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.

A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
• Predictable conduction losses, no reverse recovery charge
• Reduced system sensitivity to half-bridge deadtime variance
• Reduced negative voltage stress on gate drivers
Andover, MA — November 2024 — EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.

A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
• Predictable conduction losses, no reverse recovery charge
• Reduced system sensitivity to half-bridge deadtime variance
• Reduced negative voltage stress on gate drivers

Price & Availability
For 500-unit quantities, engineering models are priced at $212 USD each, while space level units are priced at $315 USD each.

About EPC Space
EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact
EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]
For more information or assistance, please contact our team at [email protected]