Screening Level | Space |
Configuration | Low Side Gate Driver |
VCC | 10 V |
VDRV | 5 V |
Input Logic | 3.0 V |
Max frequency | 3 MHz |
LET | 84MeV/mg/cm2 |
Package | 16 Pin QLCC SMT |
- Compatible with all EPC Space Discrete eGaN® products
- Single GAN Gate Driver Integrated Circuit
- Independent Pull-Up and Pull-Down gate drive outputs
- Capable of Driving 5000 pF+ Loads
- High Speed Capability: 3.0 MHz+
- 3 V Logic-Compatible Input control
- Non-Inverting and Inverting Logic Inputs
- 10 V Supply for Interface to Legacy PWM Controllers
- Hermetic Ceramic QLCC SMT Package
- Extremely Small Size: 0.228 x 0.183 x 0.085 inches
- Guaranteed Total Ionizing Dose:
- Rated to 1000 krad(Si) for HDR (50-300 rad(Si)/s
- Rated to 100 krad(Si) for LDR (100 mrads(Si)/s
- Single Event:
- SEE immunity for LET of 84 MeV/mg/cm2
- Neutron Fluence:
- Maintains Specification Up to 1 x 1015N/cm2
The EPC7009L16SH is a radiation hardened, high-speed gate-driver, implemented as an integrated circuit (IC) using EPC’s proprietary eGaN® technology. The EPC7009 GaN IC contains an on-chip 10 V to 5.25 V linear regulator, under-voltage lockout protection and independent pull-up and pull-down outputs to both optimize and simplify the gate-drive to an external GaN FET. The IC is packaged in an innovative, space-saving hermetic 16-pin SMT package.
- DC-DC conversion
- Satellite electrical
- Power Switches/Actuators
- Motor drivers
Quality Documents
Parts are fully qualified per EPC Space stringent qualification requirements. Reports are available upon request. Please contact [email protected] for further information
Export Classification
ITAR Controlled? No
EAR? Yes
ECCN? 9A515.e
ECCN classification 9A515.e allows for the export of this product to many countries with no license required.
See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.