EPC Space FSMD-B series of eGaN^® power switching HEMTs have been specifically designed for critical applications in Space and other the high reliability environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low R_DS(on) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact packaging.