Rad Hard eGaN^® transistors have been specifically designed for critical applications in the high reliability or commercial satellite space environments. GaN transistors offer superior reliability performance in a space environment because there are no minority carriers for single event, and as a wide band semiconductor there is less displacement for protons and neutrons, and additionally there is no oxide to breakdown.

These  devices  have  exceptionally  high  electron  mobility  and  a  low  temperature  coefficient  resulting  in  very low R_DS(on) values. The lateral structure of the die provides for very low gate charge (Q_G) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact designs.