SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown
Low Dose Rate at 100 mRad/sec
Maintains Pre-Rad specification
Maintains Pre-Rad specification for up to 1 x 1013 Neutrons/cm2
EPC Space FSMD-B series of eGaN® power switching HEMTs have been specifically designed for critical applications in the high reliability or commercial satellite space environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact packaging.