EPC7012L7C – EPC Space

Specifications

Parameters

Screening Level	COT
Configuration	Half Bridge Power Stage
V_DD	60 V
I_OUT	6 A
V_BIAS	12 V
R_DS(on)	22 _mΩ
Max frequency	2 MH_z
Input Logic	3.0 V
LET	–
Package	L7 AIN Ceramic (6.35 mm x 5.08 mm)

Features

60 VDC/6 A Half-Bridge Driver
14 mΩ (typ), integrated high-side and low-side eGaN^® FETs
Integrated GaN gate driver and level-shifter
12 V external bias supply
3.3 V or 5 V CMOS input logic level
Independent high side and low side control inputs
Logic Input Shoot-Through Protection, commands both
FETs off when control inputs are both high at same time
Internal Under-Voltage Lockout UVLO) Circuitry
Synchronous charging for high side bootstrap supply
Flexible power-sequencing with active gate pull-down
for HS and LS FET allows for V_IN before V_BIAS power-up
High Speed Switching Capability: 2+ MHz
Compact AlN Ceramic SMT Package (L7)
- Improved Thermal Conductivity Over Al₂O₃

Description

Applications

Datasheet

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Technical Documents

EPC7011L7C Datasheet
Altium

Quality Documents

Parts are fully qualified per EPC Space stringent qualification requirements. Reports are available upon request. Please contact [email protected] for further information

Conflict Mineral Statement

Export Classification

ITAR Controlled? No

EAR? Yes

ECCN? 9A515.e

ECCN classification 9A515.e allows for the export of this product to many countries with no license required.

See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.

EPC7012L7C – 60 V_DC/6 A
Half-Bridge GaN Power Stage

Specifications

Technical Documents

Quality Documents

Export Classification

Contact EPC Space

EPC7012L7C – 60 VDC/6 A Half-Bridge GaN Power Stage

Specifications

Technical Documents

Quality Documents

Export Classification

Contact EPC Space

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EPC7012L7C – 60 V_DC/6 A
Half-Bridge GaN Power Stage