EPC Space Rad-Hard eGaN^® power switching HEMTs have been specifically designed for critical applications in Space and other the high reliability environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low R_DS(on) values. The lateral structure of the die provides for very low gate charge (Q_G) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact packaging.