EPC Space’s “GaN Driving GaN Technology” Series FBS-GAM01P-C/R-PSE Single Low-Side Gate Driver Module is a high-speed gate driver consisting entirely of eGaN® switching elements. Additionally, the 5 Vdc gate driver VBIAS power supply is provided with over-voltage clamping protection along with under-voltage driver disable and reporting. The module also provides a bidirectional Power Good/Shutdown pin. The FBS-GAM01P-C/R-PSE is contained in an innovative, space-efficient, 9 pin SMT over-molded epoxy package, covered under US Patent #10,122,274 B2.
The “C” version is the commercial development vehicle for engineering brassboard use as a development platform for the “R” flight version, or for demanding, non rad-hard industrial applications.
The “R” version is the RHA flight-ready, Commerce-rated EAR-99 Device.
Single GaN HEMT gate driver for the discrete eGaN power HEMTs in the EPC Space portfolio