Rad Hard GaN discrete devices specifically designed for critical applications in the high reliability or commercial satellite space environments now available.
HAVERHILL, MA.— September 2020 — EPC Space announced a family of Rad Hard enhancement mode power transistors spanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes. These power transistors demonstrate significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. EPC Space technology produces devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions.
Critical spaceborne applications that benefit from this newly available performance include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.
Beyond the performance improvement, these devices offer superior radiation hardness under heavy ions (SEE) and gamma radiation (TID). SEE immunity is guaranteed at the wafer level and EPC Space devices are manufactured in an AS9100D certified facility in the greater Boston area.
“EPC Space is excited to bring the tremendous performance and reliability of GaN technology to the markets of defense and aerospace,” said Bel Lazar, CEO. “We are able to offer designers a superior technology with significant space heritage as thousands of our Rad Hard GaN devices have been in orbit since January of 2019.”
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
Efficient Power Conversion: Renee Yawger tel: 908.475.5702 email: firstname.lastname@example.org