Products
Rad Hard GaN Drivers and Power Stages Modules
EPC Space Rad Hard GaN Drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems. Rad Hard Power Stages Modules integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a small package. These devices are ideal for high-speed DC-DC conversion, synchronous rectification, and multi-phase motor drives.
Flight Heritage: Thousands of EPC Space Rad Hard GaN devices have been in orbit since January of 2019
Download EPC Space Product List
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Excel spreadsheet| Part Number | Description | Package Size (mm) |
|---|---|---|
| FBS-GAM01P-C-PSE | Single Output High-Speed eGaN® HEMT Gate Driver Development Module | 12.7 x 9.5 |
| FBS-GAM01P-R-PSE | Radiation-Hardened Single Output High-Speed eGaN® HEMT Gate Driver Module | 12.7 x 9.5 |
| FBS-GAM02P-C-PSE | 50 V Multifunction Power eGaN® HEMT Gate Driver Development Module | 25 x 19 |
| FBS-GAM02P-R-PSE | 50 V Radiation-Hardened Multifunction Power eGaN® HEMT Gate Driver Driver Module | 25 x 19 |
| FBS-GAM01-P-C50 | 50 V/12 A Single Low-Side Power Driver Development Module | 19 x 9.7 |
| FBS-GAM01-P-R50 | 50 V/12 A Radiation-Hardened Single Low-Side Power Driver Module | 19 x 9.7 |
| FBS-GAM01-P-C100 | 100 V/12 A Single Low-Side Power Driver Development Module | 19 x 9.7 |
| FBS-GAM01-P-R100 | 100 V/12 A Radiation-Hardened Single Low-Side Power Driver Module | 19 x 9.7 |
| FBS-GAM02-P-C50 | 50 V/ 10 A Multifunction Power Development Module | 25 x 19 |
| FBS-GAM02-P-R50 | 50 V/10 A Radiation-Hardened Multifunction Power Module | 25 x 19 |
| 72-001 | 50 V/10 A Radiation-Hardened Multifunction Power Module Parylene Coated | 25 x 19 |
| FBS-GAM04-P-C50 | 50 V/10 A Dual Low-Side Power Driver Development Module | 25 x 19 |
| FBS-GAM04-P-C100 | 100 V/10 A Dual Low-Side Power Driver Development Module | 25 x 19 |
For more information or to purchase GaN products please contact sales@epc.space
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