Rad Hard GaN Drivers and Power Stages

Products

Rad Hard GaN Drivers and Power Stages

EPC Space Rad Hard GaN Drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems. Rad Hard Power Stages integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a small package. These devices are ideal for high speed DC-DC conversion, synchronous rectification, and multi-phase motor drives.

Flight Heritage: Thousands of EPC Space Rad Hard GaN devices have been in orbit since January of 2019

Part NumberDescriptionPackage Size (mm)
FBS-GAM01P-C-PSESingle Output High-Speed eGaN® HEMT Gate Driver Development Module12.7 x 9.5
FBS-GAM01P-R-PSERadiation-Hardened Single Output High-Speed eGaN® HEMT Gate Driver Module12.7 x 9.5
FBS-GAM02P-C-PSE50 V Multifunction Power eGaN® HEMT Gate Driver Development Module25 x 19
FBS-GAM02P-R-PSE50 V Radiation-Hardened Multifunction Power eGaN® HEMT Gate Driver Driver Module25 x 19
FBS-GAM01-P-C5050 V/12 A Single Low-Side Power Driver Development Module19 x 9.7
FBS-GAM01-P-R5050 V/12 A Radiation-Hardened Single Low-Side Power Driver Module19 x 9.7
FBS-GAM01-P-C100100 V/12 A Single Low-Side Power Driver Development Module19 x 9.7
FBS-GAM01-P-R100100 V/12 A Radiation-Hardened Single Low-Side Power Driver Module19 x 9.7
FBS-GAM02-P-C5050 V/ 10 A Multifunction Power Development Module25 x 19
FBS-GAM02-P-R50 50 V/10 A Radiation-Hardened Multifunction Power Module25 x 19
FBS-GAM04-P-C5050 V/10 A Dual Low-Side Power Driver Development Module25 x 19
FBS-GAM04-P-C100100 V/10 A Dual Low-Side Power Driver Development Module25 x 19

For more information or to purchase GaN products please contact sales@epc.space