Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETs
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad Hard MOSFETs.
HAVERHILL, MA.— August 2021 — For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and lower cost power management solutions for high reliability and space applications when compared to traditional silicon-based Rad Hard transistors and ICs.
EPC Space technology produces devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions. Spanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes, the discrete power transistor family demonstrates significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. The Drivers and Power Stages product line includes ultra-fast low-side eGaN drivers, ultra-fast dual low-side eGaN drivers, and half bridge drivers with integrated eGaN power switches.
Beyond the overall higher performance, these devices offer superior radiation hardness under heavy ions (SEE), gamma radiation (TID), and Neutron Displacement Damage (DD) as compared to Si solution; moreover, SEE immunity is guaranteed by wafer. EPC Space devices are manufactured in the US at an AS9100D certified facility located in the greater Boston area. It is worth noting, that tens of thousands of these devices are already on board of satellites flying in LEO and GEO orbits with mission lives of more than ten years.
Space Level Pricing Table:
Compare these prices to your current solution before your next design!
| Part Number | Voltage | Current Unit Pricing at 500 Piece Quantities |
| FBG04N08ASH | 40 | $270.00 |
| FBG04N30BSH | 40 | $270.00 |
| EPC7014UBSH | 60 | $160.00 |
| FBG10N30BSH | 100 | $270.00 |
| FBG10N05ASH | 100 | $270.00 |
| FBG20N18BSH | 200 | $270.00 |
| FBG30N04CSH | 300 | $285.00 |
| FBSGAM01P-R-PSE | 100 | $300.00 |
| FBSGAM02P-R-PSE | 50 | $550.00 |
| FBS-GAM01-P-R50 | 50 | $500.00 |
| FBS-GAM01-P-R100 | 100 | $500.00 |
| FBS-GAM02-P-R50 | 50 | $650.00 |
“With the performance, reliability, and price advantage clearly on the side of EPC Space GaN devices, it is hard to justify continuing to pay two times the price for lower performing, heavier, larger silicon-based power solutions” commented Bel Lazar, CEO. “With GaN solutions for applications from LEO to GEO at half the price of Rad Hard silicon MOSFETs, the time to switch to GaN is now.”Critical spaceborne applications that benefit from GaN performance and price include, but not limited to, power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics, autonomous navigation and rendezvous docking, motor drives for reaction wheels, robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
Press Contact
Efficient Space: Renee Yawger tel: +1.908.619.9678 email: [email protected]
