Why GaN in Space?
Packaged SEE Immune and Radiation Hardened enhancement mode gallium nitride (eGaN) devices offer dramatically improved performance over the aging Rad Hard silicon MOSFET, enabling a new generation of power converters […]
Alex Lidow is CEO and co-founder of Efficient Power Conversion Corporation (EPC). Since 1977 Dr. Lidow has been dedicated to making power conversion more efficient upon the belief that this will reduce the harm to our environment from energy production and consumption.
In 1977 he joined International Rectifier as an R&D engineer. In 1978 he co-invented the HEXFET power MOSFET, a power transistor that launched the modern power conversion market and displaced the aging bipolar transistor.
Dr. Lidow holds many patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. He has authored numerous publications on related subjects, and recently co-authored the first textbook on GaN transistors, “GaN Transistors for Efficient Power Conversion”, now in its second edition published by John Wiley and Sons.
In 2004 he was elected to the Engineering Hall of Fame, and in 2005 IRF, under Dr. Lidow’s leadership, International Rectifier was named one of the best managed companies in America by Forbes magazine.
Packaged SEE Immune and Radiation Hardened enhancement mode gallium nitride (eGaN) devices offer dramatically improved performance over the aging Rad Hard silicon MOSFET, enabling a new generation of power converters […]