In an exclusive interview with Power Electronics News, Maurizio Salato, VP of Engineering at EPC Space, discusses the applications for an industry-leading 300 V radiation hardened GaN FET. Power […]
Andover, MA – July 2025 – EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, announces the EPC7C021, a high-performance, three-phase motor demonstration board featuring the radiation-hardened […]
Andover, MA – June 2025 – EPC Space, a leader in radiation-hardened (RH) gallium nitride (GaN) power devices, announces the launch of the EPC7030MSH, a radiation-hardened (RH) 300 V gallium […]
Andover, MA, April 5, 2025, EPC Space proudly announces that its Andover, Massachusetts facility, together with its GaN foundry, have received MIL-PRF-19500 JANS certification from the Defense Logistics Agency (DLA), […]
Andover, MA — April 2025 – EPC Space announces the release of the EPCS4001, a radiation-hardened, high-frequency buck converter controller optimized for space and high-energy physics applications. In tandem with […]
Andover, Massachusetts and El Segundo California – December 2024 – EPC Space, a leader in radiation-hardened (Rad Hard) GaN-on-silicon transistors and ICs, is pleased to announce that both its Andover, […]
Andover, MA — November 2024 — EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.
EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) Discrete family for critical spaceborne and other high reliability environments. Andover, MA.— June 2024 — EPC Space announces the introduction two […]
El Segundo, CA and Andover, MA — March 2024 — EPC Space announces the launch of EPC7009L16SH, a Radiation Hardened Gallium Nitride gate driver integrated circuit (IC.) Built on EPC’s […]