Customers who are presently putting EPC Space product demonstration boards through their paces have noticed that all the key signal measurement test points are implemented as a pair of 0.040” […]
A quick look at any discrete eGaN® high electron mobility transistor (HEMT) shows that each package contains a SS (Source Sense) pin. This post is an explanation as to why […]
These are indeed exciting times for power electronics and power electronics designers. EPC Space’s enhancement-mode gallium nitride (eGaN®) HEMT devices provide the end-user significant performance benefits and enhancements over conventional […]