EPC Space News
Latest News
40 V Rad Hard GaN FETs Set New Performance Standards for Space ApplicationsJune 12, 2024 - 11:59 am
EPC Space Launches Rad Hard GaN Gate Driver ICApril 3, 2024 - 6:00 am
EPC Space and Avnet Announce Distribution Agreement for Rad Hard GaN Power DevicesMarch 26, 2024 - 1:04 pm
EPC Space Launches World’s First Rad Hard GaN Power Stage ICFebruary 15, 2024 - 4:29 am
EPC Space’s Rad Hard Products Fuel Next Generation of Development Kits for Space Data ProcessingDecember 12, 2023 - 6:00 am
GaN Technology from EPC Space Exhibits Extreme Robustness for Space MissionsNovember 1, 2023 - 4:33 pm
GaN in Space: Unlocking Efficiency and Performance in Satellite SystemsOctober 11, 2023 - 2:49 pm
EPC Space Brings GaN to the Edge of the Atmosphere
NewsBringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers […]
GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications
NewsAs more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power […]
EPC Aims High with 300V space-grade GaN power transistor
NewsEPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments. Electronics WeeklyAugust, 2023Read article
GaN Technology Revolutionizing Space Missions: Enhancing Efficiency, Reliability, and Sustainability
NewsGaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage. Power Electronics NewsAugust, […]
Ultra-Low On-Resistance, High Current 200 V and 300 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications
NewsEPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments. Andover, […]
Podcast: GaN Devices for Space Applications
NewsGaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. […]
Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications
NewsEPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. Andover, MA.— July 2022 — EPC Space announces the introduction two […]
EPC Space Announces Ultra-Low On-Resistance 40 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications
NewsEPC Space introduces a new 40 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments. Andover, MA.— April 2022 — […]
EPC Space Announces Global Distribution Deal with Digi-Key for Rad Hard Gallium Nitride (GaN) Power Devices in Space, Aerospace, and Other High Reliability Applications
NewsHAVERHILL, MA.— February 2022 — EPC Space today announced that Digi-Key Electronics will be a global distributor for EPC Space’s line of radiation hardened (rad hard) GaN-on-silicon transistors and ICs, […]
Easy-to-use boards reduce time to market for rad-hard gallium nitride (GaN) power devices
NewsEPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation-hardened (RH) gallium nitride (GaN) power devices into their high reliability […]