EPC Space News
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EPC Space Achieves GaN JANS MIL-PRF-19500 CertificationDecember 23, 2024 - 6:41 am
EPC Space Launches Rad Hard HEMTKY Product lineNovember 5, 2024 - 3:14 pm
40 V Rad Hard GaN FETs Set New Performance Standards for Space ApplicationsJune 12, 2024 - 11:59 am
EPC Space Launches Rad Hard GaN Gate Driver ICApril 3, 2024 - 6:00 am
EPC Space and Avnet Announce Distribution Agreement for Rad Hard GaN Power DevicesMarch 26, 2024 - 1:04 pm
EPC Space Launches World’s First Rad Hard GaN Power Stage ICFebruary 15, 2024 - 4:29 am
EPC Space’s Rad Hard Products Fuel Next Generation of Development Kits for Space Data ProcessingDecember 12, 2023 - 6:00 am
GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions
NewsSpace exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior […]
EPC Space Announces Grand Opening of Andover, MA Facility Showcasing Groundbreaking Radiation Hardened GaN Technology
NewsEPC Space to host a Grand Opening ceremony for a new Andover, Massachusetts facility, showcasing radiation hardened power management solutions for critical spaceborne and other high reliability environments. Andover, MA.— […]
GaN in Space: Unlocking Efficiency and Performance in Satellite Systems
NewsThe space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key […]
Wine Down Friday with Bel Lazar, CEO of EPC Space Maurizio Di Paolo Emilio hosts Wine Down Friday with EPC Space CEO Bel Lazar to explore cutting-edge engineering and Gallium […]
EPC Space Brings GaN to the Edge of the Atmosphere
NewsBringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers […]
GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications
NewsAs more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power […]
EPC Aims High with 300V space-grade GaN power transistor
NewsEPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments. Electronics WeeklyAugust, 2023Read article
GaN Technology Revolutionizing Space Missions: Enhancing Efficiency, Reliability, and Sustainability
NewsGaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage. Power Electronics NewsAugust, […]
Ultra-Low On-Resistance, High Current 200 V and 300 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications
NewsEPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments. Andover, […]
Podcast: GaN Devices for Space Applications
NewsGaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. […]