EPC Space News
Latest News
EPC Space Launches Rad Hard HEMTKY Product lineNovember 5, 2024 - 3:14 pm
40 V Rad Hard GaN FETs Set New Performance Standards for Space ApplicationsJune 12, 2024 - 11:59 am
EPC Space Launches Rad Hard GaN Gate Driver ICApril 3, 2024 - 6:00 am
EPC Space and Avnet Announce Distribution Agreement for Rad Hard GaN Power DevicesMarch 26, 2024 - 1:04 pm
EPC Space Launches World’s First Rad Hard GaN Power Stage ICFebruary 15, 2024 - 4:29 am
EPC Space’s Rad Hard Products Fuel Next Generation of Development Kits for Space Data ProcessingDecember 12, 2023 - 6:00 am
GaN Technology from EPC Space Exhibits Extreme Robustness for Space MissionsNovember 1, 2023 - 4:33 pm
GaN in Space: Unlocking Efficiency and Performance in Satellite SystemsOctober 11, 2023 - 2:49 pm
Rad Hard Enhancement-Mode Gallium Nitride (eGaN) Power Transistor Die on Ceramic Adaptors with Space Heritage Provide ‘Plug and Play’ Functionality to Speed Time-to-Market in Critical High Reliability Designs
NewsRad Hard GaN discrete devices on adaptors are optimized to speed the time-to-market for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 — […]
Space Level Qualified Rad Hard Enhancement-Mode Gallium Nitride (eGaN®) Drivers and Power Stages with Space Heritage from EPC Space Increase Efficiency, Reduce Space and Weight in Satellite Systems
NewsRad Hard GaN drivers optimized to drive Rad Hard GaN transistors and specifically designed for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 […]
EPC Space Announces Family of Space Level Qualified 40 V to 300 V Rad Hard Enhancement-Mode Gallium Nitride (GaN) Power Transistors
NewsRad Hard GaN discrete devices specifically designed for critical applications in the high reliability or commercial satellite space environments now available. HAVERHILL, MA.— September 2020 — EPC Space announced a […]
GaN Transistor for Space Missions
NewsGaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN® solutions, EPC Space guarantees radiation hardness performance and SEE […]
Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices
NewsEnhancement-mode gallium nitride (eGaN®) technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. eGaN devices […]
Podcast Interview with Bel Lazar – GaN in Space
NewsEPC has teamed up with VPT, Inc. to form “EPC Space,” and according to early PR, its mission is “designing and manufacturing radiation-hardened GaN-on silicon transistors and ICs packaged, tested, […]
Aerospace GaN power company re-booted
NewsThe space-qualified GaN power transistors, driver ICs and modules of Freebird Semiconductor will now be available from EPC Space, a new company which includes Freebird and its assets, and is […]
EPC and VPT, Inc. Announce Joint Venture – EPC Space – Targeting the Radiation Hardened Power Electronics Market for Mission Critical Applications
NewsEPC Space, a joint venture company, will provide advanced, high-reliability, gallium nitride (GaN) power conversion solutions for critical spaceborne and other high reliability environments. EL SEGUNDO, CA and BLACKSBURG, VA […]