Packaged SEE Immune and Radiation Hardened enhancement mode gallium nitride (eGaN) devices offer dramatically improved performance over the aging Rad Hard silicon MOSFET, enabling a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before.
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Why GaN in Space?
EPC Space BlogPackaged SEE Immune and Radiation Hardened enhancement mode gallium nitride (eGaN) devices offer dramatically improved performance over the aging Rad Hard silicon MOSFET, enabling a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before.
Read more