Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers […]
As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power […]
EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments. Electronics WeeklyAugust, 2023Read article
GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage. Power Electronics NewsAugust, […]
EPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments. Andover, […]
GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. […]
EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments. Andover, MA.— July 2022 — EPC Space announces the introduction two […]
EPC Space introduces a new 40 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments. Andover, MA.— April 2022 — […]
HAVERHILL, MA.— February 2022 — EPC Space today announced that Digi-Key Electronics will be a global distributor for EPC Space’s line of radiation hardened (rad hard) GaN-on-silicon transistors and ICs, […]
EPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation-hardened (RH) gallium nitride (GaN) power devices into their high reliability […]