EPC Space

EPC Space Launches Rad Hard HEMTKY Product line

Andover, MA — November 2024 — EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.

A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
• Predictable conduction losses, no reverse recovery charge
• Reduced system sensitivity to half-bridge deadtime variance
• Reduced negative voltage stress on gate drivers
Andover, MA — November 2024 — EPC Space, a leading provider of radiation hardened GaN-on-silicon transistors and ICs, announces the launch of HEMTKY product line.

A HEMTKY is a HEMT, High Electron Mobility Transistor, with an embedded Schottky diode. The presence of an antiparallel Schottky diode in the HEMTKY structure minimizes third quadrant conduction losses absent GaN HEMT synchronous drive. Notable advantages are:
• Predictable conduction losses, no reverse recovery charge
• Reduced system sensitivity to half-bridge deadtime variance
• Reduced negative voltage stress on gate drivers

Price & Availability
For 500-unit quantities, engineering models are priced at $212 USD each, while space level units are priced at $315 USD each.

About EPC Space
EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact
EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]
For more information or assistance, please contact our team at [email protected]

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EPC Space

EPC Space to Showcase Innovative Radiation-Hardened Solutions at IEEE Nuclear & Space Radiation Effects Conference

Andover, MA — July 2024 — EPC Space, a leading provider of radiation hardened (Rad Hard) GaN-on-silicon transistors and ICs for satellite and other high-reliability applications, announces its participation in the IEEE Nuclear & Space Radiation Effects Conference (NSREC) taking place from July 22-26, 2024, in Ottawa, Canada. EPC Space will present its latest radiation-hardened GaN technology, highlighting solutions designed to meet the rigorous demands of space applications.

The IEEE NSREC is a premier event that brings together experts in radiation effects, engineers, and scientists to discuss the latest developments in radiation-hardened electronics and systems. EPC Space’s participation underscores its commitment to advancing the state-of-the-art in radiation-hardened power management and contributing to the evolution of space technologies.

In booth 415/417, EPC Space will showcase its portfolio of radiation-hardened GaN power transistors and ICs, demonstrating their superior performance, efficiency, and reliability in harsh radiation environments. Attendees will have the opportunity to see live demonstrations of EPC Space’s cutting-edge GaN technology, highlighting its capabilities in real-world applications.

“We are excited to be part of the IEEE Nuclear & Space Radiation Effects Conference and to showcase our innovative radiation-hardened GaN solutions,” said Bel Lazar, CEO of EPC Space.

To schedule a meeting with EPC Space during the conference, send a request to [email protected]

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, motor drives, and ion thrusters.

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 email: [email protected]

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EPC Space

40 V Rad Hard GaN FETs Set New Performance Standards for Space Applications


EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) Discrete family for critical spaceborne and other high reliability environments.

Andover, MA.— June 2024 — EPC Space announces the introduction two new rad-hard GaN discretes with low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. The EPC7001BSH is a Rad-Hard eGaN® 40 V, 50 A, 11 mΩ Surface Mount (FSMDB) and the EPC7002ASH is a Rad-Hard eGaN 40 V, 15 A, 28 mΩ Surface Mount (FSMDA). Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These devices come packaged in hermetic packages in very small footprints. 

EPC’s eGaN FETs and ICs offer a higher performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC Space’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.

Part NumberDrain to Source Voltage (VDS)Drain to Source Resistance (RDS(on))Single-Pulse Drain Current (IDM)Package Size (mm)Total Dose  (TID)Heavy Ion Single Event Effects (SEE)
EPC7001BSH4011 mΩ1205.7 x 3.91 MradSEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown
EPC7002ASH4028 mΩ403.4 x 3.41 MradSEE immunity up to LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

“These two new additions to our rad-hard product line offer designers high power and low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.

Price & Availability

500 units pricing of $212.80/ea for engineering models and $315.84/ea for space level grade. Products are available with lead-times of 4 and 12 weeks or less for Engineering modes and Space levels respectively.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation-hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 email: [email protected]

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EPC Space

EPC Space Launches Rad Hard GaN Gate Driver IC

El Segundo, CA and Andover, MA — March 2024 — EPC Space announces the launch of EPC7009L16SH, a Radiation Hardened Gallium Nitride gate driver integrated circuit (IC.) Built on EPC’s proprietary eGaN® IC technology, this new GaN driver enables design engineers to unlock the true potential of eGaN FET technology. 

EPC7009L16SH delivers the best solution for power management where size, efficiency and simple design are critical. The EPC7009L16SH integrates input logic interface, undervoltage lockout (UVLO) protection, a 10V-to-5.25V linear regulator and driver circuit within an innovative, space efficient, hermetic 16-pin SMT package to create a high-speed driver that can switch at rates of up to 3.0 MHz. The total ionizing dose is guaranteed to 1000 kRad and the SEE immunity for LET at 84 MeV/mg/cm2 with the IC’s primary supply voltage at 100% of its maximum operating value.

eGaN transistors are becoming the transistor of choice in Space for applications where higher switching frequency, power and radiation hardness are required.  With the introduction of the EPC7009L16SH driver the full potential of eGaN HEMTs is unleashed, which is not possible with the current silicon-based drivers.  Moreover, EPC7009L16SH can drive at least four EPC Space discrete GaN devices.

IC products make it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to implement, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.

“Integrated Rad Hard GaN-on-silicon offers higher performance in a smaller footprint, while meeting all radiation hardness requirements for space applications” says Max Zafrani, EPC Space’s CTO.

The EPC7009L16SH is part of a new family of space-level Rad Hard ICs that EPC and EPC Space will be launching starting this year. Rad Hard ICs are the next significant stage in the evolution of Rad Hard GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.

EPC7009L16SH applications include high speed DC-DC conversion, motor drivers, power switches/actuators, and satellite electrical systems.

For 1000-unit quantities engineering models are priced at 350 USD, and Rad Hard space qualified are priced at 522 USD.

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]

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EPC Space

EPC Space and Avnet Announce Distribution Agreement for Rad Hard GaN Power Devices

Avnet to distribute EPC Space Rad Hard GaN power devices to service high reliability and aerospace applications.

Andover, MA.— March 2024 — EPC Space today announced a distribution agreement with Avnet, a global distributor of electronic components and services. Avnet will be a global distributor for EPC Space’s line of radiation hardened (Rad Hard) GaN power devices qualified for satellite and high-reliability applications.

EPC Space offers a family of Rad Hard power GaN devices that includes discrete transistors, Integrated Circuits (ICs), and Modules that offer significant performance advantages over competitive silicon-based space level power devices. EPC Space’s GaN technology devices are smaller, have lower resistance, and have superior switching performance compared to silicon-based components and solutions. 

Critical spaceborne applications that benefit from the performance improvements that EPC Space devices offer include satellite’s DC-DC converters, reaction and momentum wheels, solar array drive assembly, micro-pumps for propulsion systems, and more.

“Partnering with Avnet, a global leader in distribution solutions, allows EPC Space to offer timely and reliable service to customers seeking high reliability GaN power solutions,” said Bel Lazar, EPC Space’s CEO.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride (eGaN®) power management solutions for space and other harsh environments. Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger: +1-908.619.9678 email: [email protected]

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EPC Space

EPC Space Launches World’s First Rad Hard GaN Power Stage IC

El Segundo, CA and Andover, MA — February 2024 — EPC Space announces the launch of a 50 V, 6 A Rad Hard GaN Power Stage IC designed for space applications. The EPC7011L7SH is a single chip driver plus eGaN® FET half-bridge power stage IC in a compact Aluminum Nitride ceramic surface mount technology package. Integration is implemented using EPC’s proprietary GaN IC technology. Input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs configured as a half-bridge are integrated within a monolithic chip with high-speed switching capability of 2+ MHz.

IC products make it easy for designers to take advantage of the significant performance improvements made possible with GaN technology. Integrated devices in a single chip are easier to implement, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.

“Integrated Rad Hard GaN-on-silicon offers higher performance in a smaller footprint, while meeting all radiation hardness requirements for space applications” says Bel Lazar, EPC Space CEO.

The EPC7011L7SH is part of a family of space level Rad Hard ICs that EPC and EPC Space will be launching starting this year. Rad Hard ICs are the next significant stage in the evolution of Rad Hard GaN power conversion, from integrating discrete devices to more complex solutions that offer in-circuit performance beyond the capabilities of silicon solutions and enhance the ease of design for power systems engineers.

EPC7011L7SH applications include single and multi-phase motor drivers for reaction wheel assemblies (RWAs), robotic actuators, and point of load converters.

For 1000-unit quantities engineering models are priced at 445 USD, and Rad Hard space qualified are priced at 665 USD.

For product details, please see EPC7011L7SH page here

For more information on EPC and EPC Space visit our websites:

https://epc-co.com

https://epc.space

About EPC Space

EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications such as power supplies, motor drives, ion thrusters, and more.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

EPC Space: Renee Yawger, +1 908 619 9678 Email: [email protected]

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EPC Space

EPC Space’s Rad Hard Products Fuel Next Generation of Development Kits for Space Data Processing

ANDOVER, MA, USA and Edinburgh, Scotland, UK – December 2023 – EPC Space is proud to collaborate with Alpha Data, a prominent innovator in FPGA-based acceleration boards, in the development of the ADK-VA601 Versal™ AI Core Development Kit for Space 2.0. This groundbreaking kit, featuring a fully radiation-tolerant reference design in a deployable VPX format, accelerates the development of adaptable processors for space applications.

The ADK-VA601, an adaptive System on Module (SoM), supports on-board processing (OBP) and on-orbit reconfiguration, enabling multi-sensor data fusion, capacity growth, and the convergence of ground and space networks. ADK-VA601 was developed in collaboration with Texas Instruments, EPC Space, and other industry leaders, and it uses EPC Space’s EPC7019G which is part of EPC Space’s latest generation of radiation hardened devices. Complete list can be found at https://epc.space/products/gan-discretes/. 

David Miller, Managing Director, commented: “We’re offering this as a complete development kit but in an already deployable format which makes it more relevant to customers and streamlines the adaptation process for specific mission requirements. The industry is moving from custom hardware towards modular standards that enable shorter design cycles and cost reduction. End users may still want to do some fine tuning and customization, but if 90 percent of the work has already been done by us, they can get to space much quicker. That’s the core concept behind this product.”

Bel Lazar, EPC Space CEO, commented: “In addition to our efforts in designing in Radiation Hardened (Rad Hard) GaN solutions in all new space power sockets as a viable alternative to the aging Rad Hard silicon devices, we are also addressing Rad Hard solutions for space bound development kits such as the next generation of on-orbit processing that accelerates the development timeline of space missions.

About Alpha Data

Alpha Data is a world leader in the FPGA-based acceleration boards used in high-performance computing, and rugged embedded computing.

With design canters strategically located in both the US and the UK, Alpha Data provides an international customer base with high-reliability, state-of-the-art solutions for deployment on land, at sea, in the air and in space.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger tel: +1.908.619.9678 email: [email protected]

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EPC Space

GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions

Space exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior radiation tolerance and unmatched electrical performance compared to traditional silicon MOSFETs. In this article, we delve into the reasons why GaN power devices are the ultimate choice for power conversion applications in space and how their resistance to radiation makes them an extremely robust solution for space missions.

Components in Electronics
October 2023
Read article

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EPC Space

EPC Space Announces Grand Opening of Andover, MA Facility Showcasing Groundbreaking Radiation Hardened GaN Technology

EPC Space to host a Grand Opening ceremony for a new Andover, Massachusetts facility, showcasing radiation hardened power management  solutions for critical spaceborne and other high reliability environments.

Andover, MA.— October 2023 — EPC Space announces the Grand Opening of their new facility in Andover, Massachusetts. Guests are invited to join the EPC Space team for a day of activities that will explore the possibilities that GaN presents to significantly outperform silicon-based devices and enable higher power densities, higher efficiencies, and more compact and lightweight circuitry for critical spaceborne missions. Radiation hardened (rad hard) GaN improves the performance of power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, lidar for autonomous navigation and docking, and deep space probes.

Event Highlights

  • Start the day with a warm welcome and enjoy a welcome reception. Guests will receive drink tickets for the upcoming Cocktail Reception and an automatic entry into an exciting raffle.
  • Get a glimpse into EPC Space’s remarkable journey and accomplishments as CEO, Bel Lazar, officially opens the event.
  • Witness the ceremonial opening of our new facility.
  • Explore our facility with guided tours. Immerse yourself in a product showcase and demonstrations, featuring a dedicated Applications table hosted by EPC Space engineers. They will be available to answer questions and demonstrate real-world applications such as DC-DC, POL, and motor control.
  • Book Signing by Dr. Alex Lidow (2:30 PM – 3:30 PM): Take this opportunity to meet with Dr. Alex Lidow, CEO of EPC, and author of “GaN Power Devices and Applications,” who will be available to sign copies.
  • Connect with EPC Space experts for personalized discussions and insights into rad hard GaN technology.
  • Enter for a chance to win exciting prizes during the raffle.
  • Network with fellow attendees and the EPC Space team during the Cocktail Reception.

To attend send an RSVP by October 18, 2023 to [email protected]

“EPC Space is proud to be at the forefront of providing radiation hardened GaN solutions for power conversion to the aerospace industry and beyond,” said Bel Lazar, CEO of EPC Space. “We are happy to invite our customers and partners to be a part of this event and see first-hand  how our technology is shaping the future of high reliability applications”.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger, +1 908 619 9678 email: [email protected]

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EPC Space

GaN in Space: Unlocking Efficiency and Performance in Satellite Systems

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

Power Electronics News
October 2023
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