EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad Hard MOSFETs. HAVERHILL, MA.— August 2021 — For […]
EPC Space is providing Rad Hard GaN power devices to Astranis for use in the latest build of new small geostationary communications satellites. HAVERHILL, MA.— August 2021 — EPC Space […]
EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments. HAVERHILL, MA.— July 2021 — […]
Spirit Electronics Podcast: What Can GaN Do in Space? Rad Hard Products and Applications In this episode, EPC Space CEO Bel Lazar talks with Marti about the company’s product lines […]
Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. GaN power […]
Rad Hard GaN discrete devices on adaptors are optimized to speed the time-to-market for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 — […]
Rad Hard GaN drivers optimized to drive Rad Hard GaN transistors and specifically designed for critical applications in the high reliability or commercial satellite space environments. HAVERHILL, MA.— October 2020 […]
Rad Hard GaN discrete devices specifically designed for critical applications in the high reliability or commercial satellite space environments now available. HAVERHILL, MA.— September 2020 — EPC Space announced a […]
GaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN® solutions, EPC Space guarantees radiation hardness performance and SEE […]
Enhancement-mode gallium nitride (eGaN®) technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. eGaN devices […]