The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.
In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.
https://epc.space/wp-content/uploads/Unlocking-Efficiency-and-Performance-in-Satellite-Systems-EPC.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2023-10-11 14:49:262024-07-10 13:07:14GaN in Space: Unlocking Efficiency and Performance in Satellite Systems
Maurizio Di Paolo Emilio hosts Wine Down Friday with EPC Space CEO Bel Lazar to explore cutting-edge engineering and Gallium Nitride’s incredible possibilities. Bel explains why GaN is revolutionizing space technology because of its superior properties over silicon. Learn how GaN is changing vital space systems and how a visionary engineer sees the future of engineering.
Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.
https://epc.space/wp-content/uploads/GaN-small-cubesat.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2023-10-03 10:22:212023-10-03 10:22:44EPC Space Brings GaN to the Edge of the Atmosphere
As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.
https://epc.space/wp-content/uploads/GaN-HEMT-Package.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2023-09-15 14:00:262023-09-15 14:00:27GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications
https://epc.space/wp-content/uploads/EPC-Aims-High-300-V-Space-grade-GaN.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2023-08-31 09:15:082023-09-01 14:42:37EPC Aims High with 300V space-grade GaN power transistor
GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.
EPC Space introduces two new radiation-hardened (rad-hard) gallium nitride (GaN) devices in the high current “G-package” family for power conversion solutions in critical spaceborne and other high reliability environments.
Andover, MA.— August 2022 — EPC Space announces the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and high current capability for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints.
The EPC7020G is a 200 V, 14.5 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor and the EPC7030G is a 300 V, 32 mΩ, 200 Apulsed radiation-hardened gallium nitride transistor. These devices join the 40 V, 4.5 mΩ EPC7019G and the 100 V, 4.5 mΩ EPC7018G to cover applications including power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes. This product family comes packaged in a compact hermetic package in a footprint less than 45 mm2.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
“The G-Package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.
Price & Availability
Contact factory for price, availability, and delivery.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
https://epc.space/wp-content/uploads/G-Package-News-Banner.jpg6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2023-08-29 06:00:002023-08-25 14:45:46Ultra-Low On-Resistance, High Current 200 V and 300 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications
GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).
https://epc.space/wp-content/uploads/gan-devices-space-apps.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-11-23 14:05:392022-11-23 14:06:22Podcast: GaN Devices for Space Applications
EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments.
Andover, MA.— July 2022 — EPC Space announces the introduction two new rad-hard GaN transistors with ultra-low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints. Chip-scale versions of this device are available from EPC.
Part Number
Drain to Source Voltage(VDS)
Drain to Source Resistance (RDS(on))
Single-Pulse Drain Current(IDM)
Package Size(mm)
Total Dosefor Space Level Applications
Single Event (with VDS up to 100% of rated Breakdown) for Space Level Applications
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
“These two new additions to our rad-hard product line offer designers high power, ultra-low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.
Price & Availability
EPC7018G and EPC7007B:
500 units pricing of $ $212.80/ea for engineering models and $315.84/ea for space level grade.
Contact factory for availability and delivery.
About EPC Space
EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
https://epc.space/wp-content/uploads/EPC7018G-EPC7007B-PR.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-07-19 06:00:002023-08-25 09:14:34Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications
EPC Space introduces a new 40 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments.
Andover, MA.— April 2022 — EPC Space announces the introduction of EPC7019G, a 40 V, 4 mΩ, 530 Apulsed, radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. The EPC7019G has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices come packaged in a new compact hermetic package with dual gate in a footprint less than 45 mm2. Chip-scale versions of this device are available from EPC.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes.
“The EPC7019G is the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “This device offers a mission-critical component with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.
Price & Availability
500 units pricing of $212 each for engineering models and $315 each for space level grade. Contact factory for availability and delivery.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
https://epc.space/wp-content/uploads/EPC7019G-PR.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-04-14 09:00:002022-04-13 14:19:03EPC Space Announces Ultra-Low On-Resistance 40 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications
