EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments.

HAVERHILL, MA.— July 2021 — EPC Space announces the introduction of EPC7014UB, a 60 V radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. Utilizing GaN technology, the EPC7014UB outperforms RH silicon-based devices as it offers higher breakdown strength, faster switching speed, and lower on-resistance, than other RH power devices.

Lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include power supplies for satellites and space mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics, instrumentation and reaction wheels, and ion thrusters for satellite orientation and positioning, as well as interplanetary propulsion of low-mass robotic vehicles. Additionally, the EPC7014UB can be used as a gate driver interface between CMOS or TTL control circuits and power devices in a radiation hardened environment.

The EPC7014UB, is a 60 V, 580 mΩ, 4 A_Pulsed, rad-hard eGaN FET in an industry standard UB package. The EPC7014UB has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are also offered in a chip-scale package from EPC.

“GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, lower cost, and greater power densities than achievable with rad hard silicon” said Bel Lazar, CEO of EPC Space. “We are excited about this technology’s ability to provide mission-critical components for the space and other high-reliability markets”.

Price & Availability

500 units space level grade pricing starts at $160/each. Contact factory for availability and delivery.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger, +1 908 619 9678 email: [email protected]

Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
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Rad Hard GaN drivers optimized to drive Rad Hard GaN transistors and specifically designed for critical applications in the high reliability or commercial satellite space environments.

HAVERHILL, MA.— October 2020 — EPC Space announced a family of Rad Hard enhancement mode GaN drivers and power stages. Rad Hard GaN drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems.  Rad Hard power stages integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a tiny footprint for smaller, lower weight systems. 

The Drivers and Power Stages product line includes ultra-fast low-side eGaN drivers, ultra-fast dual low-side eGaN drivers, and half bridge drivers with integrated eGaN power switches.  These devices are ideal for high speed DC-DC conversion, synchronous rectification, commercial satellite electrical power systems (EPS) and avionics, and multi-phase motor drives. As an example, thousands of these devices are currently flying in orbit as motor drivers for satellite reaction wheels.

Beyond the performance improvement inherent from using GaN-based devices, these products offer superior radiation hardness under heavy ions (SEE) and gamma radiation (TID).  EPC Space devices are manufactured in an AS9100D certified facility in the greater Boston area.

“These devices provide engineers with a higher performance, modular solution with guaranteed electrical, thermal, and radiation performance,” said Max Zafrani, Chief Technology Officer. “In addition to very high efficiencies and extremely low parts count, operation above 1 MHz enables smaller magnetics for smaller, lower weight designs and an extremely cost competitive solution”

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

Press Contact

Efficient Power Conversion: Renee Yawger tel: 908.475.5702 email: [email protected]

GaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN^® solutions, EPC Space guarantees radiation hardness performance and SEE (single-event effects) immunity, with devices that are specifically designed for critical applications in commercial satellite space. These devices have exceptionally high electron mobility and a low-temperature coefficient with very low R_DS(on) values.

EETimes
July, 2020
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