EPC Space

Space Level Qualified Rad Hard Enhancement-Mode Gallium Nitride (eGaN®) Drivers and Power Stages with Space Heritage from EPC Space Increase Efficiency, Reduce Space and Weight in Satellite Systems

Rad Hard GaN drivers optimized to drive Rad Hard GaN transistors and specifically designed for critical applications in the high reliability or commercial satellite space environments.

HAVERHILL, MA.— October 2020 — EPC Space announced a family of Rad Hard enhancement mode GaN drivers and power stages. Rad Hard GaN drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems.  Rad Hard power stages integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a tiny footprint for smaller, lower weight systems. 

The Drivers and Power Stages product line includes ultra-fast low-side eGaN drivers, ultra-fast dual low-side eGaN drivers, and half bridge drivers with integrated eGaN power switches.  These devices are ideal for high speed DC-DC conversion, synchronous rectification, commercial satellite electrical power systems (EPS) and avionics, and multi-phase motor drives. As an example, thousands of these devices are currently flying in orbit as motor drivers for satellite reaction wheels.

Beyond the performance improvement inherent from using GaN-based devices, these products offer superior radiation hardness under heavy ions (SEE) and gamma radiation (TID).  EPC Space devices are manufactured in an AS9100D certified facility in the greater Boston area.

“These devices provide engineers with a higher performance, modular solution with guaranteed electrical, thermal, and radiation performance,” said Max Zafrani, Chief Technology Officer. “In addition to very high efficiencies and extremely low parts count, operation above 1 MHz enables smaller magnetics for smaller, lower weight designs and an extremely cost competitive solution”

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

Press Contact

Efficient Power Conversion: Renee Yawger tel: 908.475.5702 email: [email protected]

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EPC Space

EPC Space Announces Family of Space Level Qualified 40 V to 300 V Rad Hard Enhancement-Mode Gallium Nitride (GaN) Power Transistors

40 V -300 V Rad Hardened

Rad Hard GaN discrete devices specifically designed for critical applications in the high reliability or commercial satellite space environments now available.

HAVERHILL, MA.— September 2020 — EPC Space announced a family of Rad Hard enhancement mode power transistors spanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes. These power transistors demonstrate significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. EPC Space technology produces devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions. 

Critical spaceborne applications that benefit from this newly available performance include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.

Beyond the performance improvement, these devices offer superior radiation hardness under heavy ions (SEE) and gamma radiation (TID).  SEE immunity is guaranteed at the wafer level and EPC Space devices are manufactured in an AS9100D certified facility in the greater Boston area.

“EPC Space is excited to bring the tremendous performance and reliability of GaN technology to the markets of defense and aerospace,” said Bel Lazar, CEO. “We are able to offer designers a superior technology with significant space heritage as thousands of our Rad Hard GaN devices have been in orbit since January of 2019.”

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

Press Contact

Efficient Power Conversion: Renee Yawger tel: 908.475.5702 email: [email protected]

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EPC Space

GaN Transistor for Space Missions

GaN in Space Missions

GaN power transistors are an ideal choice for power and RF applications to support extreme space missions. Through its new eGaN® solutions, EPC Space guarantees radiation hardness performance and SEE (single-event effects) immunity, with devices that are specifically designed for critical applications in commercial satellite space. These devices have exceptionally high electron mobility and a low-temperature coefficient with very low RDS(on) values.

EETimes
July, 2020
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EPC Space

Radiation Performance of Enhancement-Mode Gallium Nitride Power Devices

Radiation Performance of Enhancement-Mode Gallium Nitride

Enhancement-mode gallium nitride (eGaN®) technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. eGaN devices also exhibit superior radiation tolerance compared with silicon MOSFETs.

Bodo’s Power Systems
June, 2020
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EPC Space

Podcast Interview with Bel Lazar – GaN in Space

GaN in Space Podcast

EPC has teamed up with VPT, Inc. to form “EPC Space,” and according to early PR, its mission is “designing and manufacturing radiation-hardened GaN-on silicon transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications.” In this PSDCast, Jason Lomberg interviews EPC Space CEO, Bel Lazar, on the new venture.

Power Systems Design PSDCast
June 16, 2020
Listen to podcast

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EPC Space

Aerospace GaN power company re-booted

The space-qualified GaN power transistors, driver ICs and modules of Freebird Semiconductor will now be available from EPC Space, a new company which includes Freebird and its assets, and is a joint-venture between GaN power transistor maker EPC and high-rel power supply company VPT.

Electronics Weekly
June 16,2020
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EPC Space

EPC and VPT, Inc. Announce Joint Venture – EPC Space – Targeting the Radiation Hardened Power Electronics Market for Mission Critical Applications

EPC Space announcement

EPC Space, a joint venture company, will provide advanced, high-reliability, gallium nitride (GaN) power conversion solutions for critical spaceborne and other high reliability environments.

EL SEGUNDO, CA and BLACKSBURG, VA – June 2020 – Efficient Power Conversion (EPC) Corporation and VPT, Inc., A HEICO company (NYSE:HEI.A) (NYSE:HEI)  announce the establishment of EPC Space LLC, a joint venture focused on designing and manufacturing radiation hardened (Rad Hard) GaN-on-silicon transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications.

EPC Space (web address: EPC.Space) will provide advanced, high-reliability, power conversion solutions for critical spaceborne environments in applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters. These GaN-based components offer superior performance advantages over traditional silicon-based solutions.

Alex Lidow, CEO and Co-Founder of EPC noted, “VPT’s global leadership in power conversion solutions for avionics, military, and space applications is the perfect complement to EPC’s leadership in GaN-based power conversion devices.” Further, Dr. Lidow said,  “The joint venture – EPC Space – is taking the superior performance of gallium nitride to the high reliability community offering electrical and radiation performance beyond the capabilities of the aging Rad Hard silicon MOSFET.”

Dan Sable, Founder and CEO of VPT, Inc. commented, “EPC’s GaN technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. We are excited about this venture’s ability to provide mission-critical components and services to our high-reliability markets.”

About EPC

EPC is the leader in enhancement mode gallium nitride-based power management devices and integrated circuits that provide even greater space, energy, and cost efficiency. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.

Website: epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

About VPT and HEICO Electronic Technologies Group

VPT, Inc., part of the HEICO Electronic Technologies Group, is a global provider of innovative DC-DC power converters, EMI filters, and custom engineering services for avionics, military, space, and industrial applications. Every day, organizations like NASA, ESA, Lockheed Martin, Boeing, BAE Systems, Thales and many more depend on high-reliability solutions from VPT to power critical systems. For more information about VPT, please visit www.vptpower.com. 

HEICO Corporation (NYSE:HEI.A) (NYSE:HEI) is engaged primarily in niche segments of the aviation, defense, space and electronics industries through its Hollywood, FL based HEICO Aerospace Holdings Corp. subsidiary and its Miami, FL-based HEICO Electronic Technologies Corp. subsidiary. For more information about HEICO, please visit www.heico.com.

Press contacts:

Efficient Power Conversion: Renee Yawger tel: 908.475.5702 email: [email protected]

VPT, Inc: Katie Bouchard tel: 425-353-3010 x 8511 email: [email protected]

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