GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).
https://epc.space/wp-content/uploads/gan-devices-space-apps.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-11-23 14:05:392022-11-23 14:06:22Podcast: GaN Devices for Space Applications
EPC Space expands its radiation-hardened (rad-hard) gallium nitride (GaN) transistor family for critical spaceborne and other high reliability environments.
Andover, MA.— July 2022 — EPC Space announces the introduction two new rad-hard GaN transistors with ultra-low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints. Chip-scale versions of this device are available from EPC.
Part Number
Drain to Source Voltage(VDS)
Drain to Source Resistance (RDS(on))
Single-Pulse Drain Current(IDM)
Package Size(mm)
Total Dosefor Space Level Applications
Single Event (with VDS up to 100% of rated Breakdown) for Space Level Applications
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
“These two new additions to our rad-hard product line offer designers high power, ultra-low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said Bel Lazar, CEO of EPC Space.
Price & Availability
EPC7018G and EPC7007B:
500 units pricing of $ $212.80/ea for engineering models and $315.84/ea for space level grade.
Contact factory for availability and delivery.
About EPC Space
EPC Space provides revolutionary high-reliability radiation-hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
https://epc.space/wp-content/uploads/EPC7018G-EPC7007B-PR.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-07-19 06:00:002023-08-25 09:14:34Ultra-Low On-Resistance 100 V and 200 V Rad-Hard Gallium Nitride (GaN) Power Devices Increase Power Density for Demanding Space Applications
EPC Space introduces a new 40 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments.
Andover, MA.— April 2022 — EPC Space announces the introduction of EPC7019G, a 40 V, 4 mΩ, 530 Apulsed, radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. The EPC7019G has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices come packaged in a new compact hermetic package with dual gate in a footprint less than 45 mm2. Chip-scale versions of this device are available from EPC.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.
Applications benefiting from the performance of these products include power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep space probes.
“The EPC7019G is the lowest on-resistance of any packaged rad hard transistor currently on the market,” said Bel Lazar, CEO of EPC Space. “This device offers a mission-critical component with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad hard silicon solutions”.
Price & Availability
500 units pricing of $212 each for engineering models and $315 each for space level grade. Contact factory for availability and delivery.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
https://epc.space/wp-content/uploads/EPC7019G-PR.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-04-14 09:00:002022-04-13 14:19:03EPC Space Announces Ultra-Low On-Resistance 40 V Rad Hard Gallium Nitride (GaN) Power Device for Demanding Space Applications
HAVERHILL, MA.— February 2022 — EPC Space today announced that Digi-Key Electronics will be a global distributor for EPC Space’s line of radiation hardened (rad hard) GaN-on-silicon transistors and ICs, packaged, tested, and qualified for satellite and high-reliability applications.
Spanning a range of 40 V to 300 V, EPC Space offers a family of rad hard enhancement mode power transistors. These power transistors demonstrate significant performance advantages over competitive silicon-based rad hard power MOSFETs. EPC Space technology produces GaN devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions.
Digi-Key will also distribute EPC Space’s family of rad hard enhancement mode GaN drivers and power stages. Rad hard GaN drivers are optimized to drive rad hard GaN transistors in critical spaceborne systems. Rad hard power stages integrate a high-speed gate drive circuit with power switches to provide a monolithic complete power stage in a tiny footprint for smaller, lower weight systems.
The drivers and power stages product line includes ultra-fast, low-side eGaN® drivers, ultra-fast, dual low-side eGaN drivers, and half-bridge drivers with integrated eGaN power switches.
Critical spaceborne applications that benefit from the performance improvements that these devices offer include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.
“The addition of EPC Space’s rad hard gallium nitride-based power management products completes the entire EPC’s product portfolio through Digi-Key and brings intriguing next-generation breakthrough benefits to existing silicon-based solutions,” said David Stein, vice president of global supplier management for Digi-Key. “We are thrilled to be able to offer these innovative products to the high reliability engineering community.”
“Digi-Key has the fastest global logistics and the most efficient supply chain to service customers from early engineering through volume production. Digi-Key’s world-class distribution capabilities will translate into fast and easy service to our global customers who want to access the entire line of EPC’s GaN power device products to replace their less-efficient, more costly silicon solutions,” said Bel Lazar, EPC Space’s CEO.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride (eGaN®) power management solutions for space and other harsh environments. Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.
eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
https://epc.space/wp-content/uploads/EPC-Space-Digi-Key-2.png7901500EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-02-15 06:00:002022-02-14 09:54:11EPC Space Announces Global Distribution Deal with Digi-Key for Rad Hard Gallium Nitride (GaN) Power Devices in Space, Aerospace, and Other High Reliability Applications
EPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation-hardened (RH) gallium nitride (GaN) power devices into their high reliability and aerospace applications.
https://epc.space/wp-content/uploads/Easy-to-use-boards-reduce-time-to-market.png7901500EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-02-10 18:38:142024-07-10 12:53:08Easy-to-use boards reduce time to market for rad-hard gallium nitride (GaN) power devices
EPC Space is providing easy-to-use demonstration boards ideal for evaluating the feature and capabilities of Rad Hard GaN power devices.
HAVERHILL, MA.— January 2022 — EPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation hardened (RH) gallium nitride (GaN) power devices into their high reliability and aerospace applications.
A new family of demonstration boards offers fast prototyping and evaluation of the features and capabilities of EPC Space Rad Hard eGaN power devices. The offering includes the following: 1) a trio of low-side driver demo boards, EPC7C001, EPC7C002, EPC7C003, which utilize the EPC Space’s eGaN gate driver modules to drive a corresponding 40V, 100V, or 200V discrete eGaN FET; 2) EPC7C005 demonstration board that allows evaluation of the switching operation and conversion efficiency performance of the FBS-GAM02-P-C50 Rad Hard power module connected as a half-bridge point-of-load (POL) output stage; and 3) the EPC7C006 demo board which is a three-phase motor demonstration board that utilizes the FBS-GAM02-P-R50 module.
“Radiation Hardened eGaN FETs and ICs offer designers improved performance, lower cost, and shorter delivery times compared to RH silicon-based devices, said Bel Lazar, CEO of EPC Space. “We are happy to provide an easy-to-use evaluation platform to assist designers looking to convert their RH silicon designs to take advantage of the higher power densities, higher efficiencies, and better cost and delivery that GaN offers.”
5-unit pricing starts at $850/each with lead times of 6 weeks.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
https://epc.space/wp-content/uploads/7C005-PR.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2022-01-18 09:00:002022-01-17 11:05:29Easy-to-Use Demonstration Boards Reduce Time to Market for Rad Hard Gallium Nitride (GaN) Power Devices in High Reliability and Aerospace Applications
As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.
Components in Electronics October, 2021 Read article
https://epc.space/wp-content/uploads/motor-drive-apps-space.png6301200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2021-11-03 17:09:292022-01-17 11:09:04Motor Driver Applications in Space
https://epc.space/wp-content/uploads/GaN-Space-Frontiers.png6301200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2021-09-23 10:16:302022-01-17 11:09:18Exploring the Frontiers of GaN Power Devices
Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.
Power Electronics News September 2021 Read article
https://epc.space/wp-content/uploads/GaN-Reaction-Wheel-1.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2021-09-21 09:53:302022-01-17 11:12:04Discovering GaN for Power Design in Space — An Interview with Alex Lidow
EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad Hard MOSFETs.
HAVERHILL, MA.— August 2021 — For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and lower cost power management solutions for high reliability and space applications when compared to traditional silicon-based Rad Hard transistors and ICs.
EPC Space technology produces devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions. Spanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes, the discrete power transistor family demonstrates significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. The Drivers and Power Stages product line includes ultra-fast low-side eGaN drivers, ultra-fast dual low-side eGaN drivers, and half bridge drivers with integrated eGaN power switches.
Beyond the overall higher performance, these devices offer superior radiation hardness under heavy ions (SEE), gamma radiation (TID), and Neutron Displacement Damage (DD) as compared to Si solution; moreover, SEE immunity is guaranteed by wafer. EPC Space devices are manufactured in the US at an AS9100D certified facility located in the greater Boston area. It is worth noting, that tens of thousands of these devices are already on board of satellites flying in LEO and GEO orbits with mission lives of more than ten years.
Space Level Pricing Table: Compare these prices to your current solution before your next design!
“With the performance, reliability, and price advantage clearly on the side of EPC Space GaN devices, it is hard to justify continuing to pay two times the price for lower performing, heavier, larger silicon-based power solutions” commented Bel Lazar, CEO. “With GaN solutions for applications from LEO to GEO at half the price of Rad Hard silicon MOSFETs, the time to switch to GaN is now.”Critical spaceborne applications that benefit from GaN performance and price include, but not limited to, power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics, autonomous navigation and rendezvous docking, motor drives for reaction wheels, robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
https://epc.space/wp-content/uploads/Break-Free-from-Silicon-EPC-Space.png6321200EPC Spacehttps://epc.space/wp-content/uploads/EPC-SPACE-300x19.pngEPC Space2021-08-25 06:00:002022-01-17 11:12:28Rad Hard Gallium Nitride (GaN) Power Devices from EPC Space Offer Improved Performance, Shorter Lead-times, and Lower Prices vs. Silicon Rad Hard MOSFETs
