EPC Space is providing easy-to-use demonstration boards ideal for evaluating the feature and capabilities of Rad Hard GaN power devices.

HAVERHILL, MA.— January 2022 — EPC Space announces the availability of a family of easy-to-use demonstration boards to help designers quickly and easily implement radiation hardened (RH) gallium nitride (GaN) power devices into their high reliability and aerospace applications.

A new family of demonstration boards offers fast prototyping and evaluation of the features and capabilities of EPC Space Rad Hard eGaN power devices. The offering includes the following: 1) a trio of low-side driver demo boards, EPC7C001, EPC7C002, EPC7C003, which utilize the EPC Space’s eGaN gate driver modules to drive a corresponding 40V, 100V, or 200V discrete eGaN FET; 2) EPC7C005 demonstration board that allows evaluation of the switching operation and conversion efficiency performance of the FBS-GAM02-P-C50 Rad Hard power module connected as a half-bridge point-of-load (POL) output stage; and 3) the EPC7C006 demo board which is a three-phase motor  demonstration board that utilizes the FBS-GAM02-P-R50 module.

“Radiation Hardened eGaN FETs and ICs offer designers improved performance, lower cost, and shorter delivery times compared to RH silicon-based devices, said Bel Lazar, CEO of EPC Space. “We are happy to provide an easy-to-use evaluation platform to assist designers looking to convert their RH silicon designs to take advantage of the higher power densities, higher efficiencies, and better cost and delivery that GaN offers.”

EPC Space Demonstration Boards

EPC Space P/N	Description	Featured Products
EPC7C001	FBS-GAM01P-PSE FBG04N30 Demo Board	FBS-GAM01P-PSE, FBG04N30
EPC7C002	FBS-GAM01P-PSE FBG10N30 Demo Board	FBS-GAM01P-PSE, FBG10N30
EPC7C003	FBS-GAM01P-PSE FBG20N18 Demo Board	FBS-GAM01P-PSE, FBG20N18
EPC7C005	FBS-GAM02-P-C50 POL Eval. Board	FBS-GAM02-P-C50
EPC7C006	EPCS-GAM02-P-C50 3-Phase Motor Control Motherboard/Eval. Board	FBS-GAM02-P-R50

Price and Availability

5-unit pricing starts at $850/each with lead times of 6 weeks.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger tel: +1-908.619.9678 email: [email protected]

Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.

Electronics Weekly
September, 2021
Read article

EPC Space’s Rad Hard GaN power devices have higher performance, lower mass, smaller footprint, and much lower cost than traditional silicon Rad Hard MOSFETs.

HAVERHILL, MA.— August 2021 — For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and lower cost power management solutions for high reliability and space applications when compared to traditional silicon-based Rad Hard transistors and ICs.

EPC Space technology produces devices that are smaller, have lower resistance, and have many times superior switching performance compared to silicon solutions.  Spanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes, the discrete power transistor family demonstrates significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. The Drivers and Power Stages product line includes ultra-fast low-side eGaN drivers, ultra-fast dual low-side eGaN drivers, and half bridge drivers with integrated eGaN power switches.

Beyond the overall higher performance, these devices offer superior radiation hardness under heavy ions (SEE), gamma radiation (TID), and Neutron Displacement Damage (DD) as compared to Si solution; moreover, SEE immunity is guaranteed by wafer. EPC Space devices are manufactured in the US at  an AS9100D certified facility located in the greater Boston area. It is worth noting, that  tens of thousands of these devices are already on board of satellites flying in LEO and GEO orbits with mission lives of more than ten years.

Space Level Pricing Table:
Compare these prices to your current solution before your next design!

Part Number	Voltage	Current Unit Pricing at 500 Piece Quantities
FBG04N08ASH	40	$270.00
FBG04N30BSH	40	$270.00
EPC7014UBSH	60	$160.00
FBG10N30BSH	100	$270.00
FBG10N05ASH	100	$270.00
FBG20N18BSH	200	$270.00
FBG30N04CSH	300	$285.00
FBSGAM01P-R-PSE	100	$300.00
FBSGAM02P-R-PSE	50	$550.00
FBS-GAM01-P-R50	50	$500.00
FBS-GAM01-P-R100	100	$500.00
FBS-GAM02-P-R50	50	$650.00

“With the performance, reliability, and price advantage clearly on the side of  EPC Space GaN devices, it is hard to justify continuing to pay two times the price for lower performing, heavier, larger silicon-based power solutions” commented Bel Lazar, CEO. “With GaN solutions for applications from LEO to GEO at half the price of Rad Hard silicon MOSFETs, the time to switch to GaN is now.”Critical spaceborne applications that benefit from GaN performance and price include, but not limited to, power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics, autonomous navigation and rendezvous docking, motor drives for reaction wheels, robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger tel: +1.908.619.9678 email: [email protected]

EPC Space introduces a new 60 V radiation-hardened (rad-hard) gallium nitride (GaN) transistor for power conversion solutions in critical spaceborne and other high reliability environments.

HAVERHILL, MA.— July 2021 — EPC Space announces the introduction of EPC7014UB, a 60 V radiation-hardened gallium nitride transistor that is lower in cost and is a more efficient solution than the nearest comparable radiation hardened (RH) silicon MOSFET. Utilizing GaN technology, the EPC7014UB outperforms RH silicon-based devices as it offers higher breakdown strength, faster switching speed, and lower on-resistance, than other RH power devices.

Lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include power supplies for satellites and space mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics, instrumentation and reaction wheels, and ion thrusters for satellite orientation and positioning, as well as interplanetary propulsion of low-mass robotic vehicles. Additionally, the EPC7014UB can be used as a gate driver interface between CMOS or TTL control circuits and power devices in a radiation hardened environment.

The EPC7014UB, is a 60 V, 580 mΩ, 4 A_Pulsed, rad-hard eGaN FET in an industry standard UB package. The EPC7014UB has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm²). These devices are also offered in a chip-scale package from EPC.

“GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, lower cost, and greater power densities than achievable with rad hard silicon” said Bel Lazar, CEO of EPC Space. “We are excited about this technology’s ability to provide mission-critical components for the space and other high-reliability markets”.

Price & Availability

500 units space level grade pricing starts at $160/each. Contact factory for availability and delivery.

About EPC Space

EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.

Radiation hardened GaN-based power devices address critical spaceborne environments for applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters.

 eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Press Contact

Efficient Space: Renee Yawger, +1 908 619 9678 email: [email protected]

Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
Read article